BUV21 SWITCHMODE Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power BUV21 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Note 1) CollectorEmitter Sustaining Voltage V 200 Vdc CEO(sus) (I = 200 mA, I = 0, L = 25 mH) C B Collector Cutoff Current at Reverse Bias: I mAdc CEX (V = 250 V, V = 1.5 V)(T = 25 C unless otherwise noted) 3.0 CE BE C (V = 250 V, V = 1.5 V, T = 125 C) CE BE C 12.0 CollectorEmitter Cutoff Current I 3.0 mAdc CEO (V = 160 V) CE EmitterBase Reverse Voltage V 7 V EBO (I = 50 mA) E EmitterCutoff Current I 1.0 mAdc EBO (V = 5 V) EB SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased I Adc S/b (V = 20 V, t = 1 s) CE 12 (V = 140 V, t = 1 s) CE 0.15 ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 12 A, V = 2 V) C CE 20 60 (I = 25 A, V = 4 V) C CE 10 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 12 A, I = 1.2 A) C B 0.6 (I = 25 A, I = 3 A) C B 1.5 BaseEmitter Saturation Voltage V 1.5 Vdc BE(sat) (I = 25 A, I = 3 A) C B DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f 8.0 MHz T (V = 15 V, I = 2 A, f = 4 MHz) CE C SWITCHING CHARACTERISTICS (Resistive Load) Turn-on Time t 1.0 s on (I = 25 A, I = I = 3 A, C B1 B2 Storage Time t 1.8 s V = 100 V, R = 4 ) CC C Fall Time t 0.4 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 1.0 0.8 0.6 0.4 0.2 0 40 80 120 160 200 T , TEMPERATURE (C) C Figure 1. Power Derating