2N6284 (NPN) 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for generalpurpose amplifier and lowfrequency switching applications. 2N6284 (NPN) 2N6286, 2N6287 (PNP) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 T , CASE TEMPERATURE (C) C Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 0.1 Adc, I = 0) 2N6286 C B 80 2N6284, 2N6287 100 Collector Cutoff Current I mAdc CEO (V = 40 Vdc, I = 0) 1.0 CE B (V = 50 Vdc, I = 0) 1.0 CE B Collector Cutoff Current I mAdc CEX (V = Rated V , V = 1.5 Vdc) CE CB BE(off) 0.5 (V = Rated V , V = 1.5 Vdc, T = 150 C) CE CB BE(off) C 5.0 Emitter Cutoff Current I 2.0 mAdc EBO (V = 5.0 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 10 Adc, V = 3.0 Vdc) C CE 750 18,000 (I = 20 Adc, V = 3.0 Vdc) C CE 100 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 Adc, I = 40 mAdc) C B 2.0 (I = 20 Adc, I = 200 mAdc) C B 3.0 BaseEmitter On Voltage V 2.8 Vdc BE(on) (I = 10 Adc, V = 3.0 Vdc) C CE BaseEmitter Saturation Voltage V 4.0 Vdc BE(sat) (I = 20 Adc, I = 200 mAdc) C B DYNAMIC CHARACTERISTICS Magnitude of Common Emitter SmallSignal ShortCircuit h 4.0 MHz fe Forward Current Transfer Ratio (I = 10 Adc, V = 3.0 Vdc, f = 1.0 MHz) C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 2N6284 CB E 400 2N6286, 2N6287 600 SmallSignal Current Gain h 300 fe (I = 10 Adc, V = 3.0 Vdc, f = 1.0 kHz) C CE 2. Indicates JEDEC Registered Data. 3. Pulse test: Pulse Width = 300 s, Duty Cycle = 2%