Product Information

BUX87

BUX87 electronic component of STMicroelectronics

Datasheet
Transistor: NPN; bipolar; 1kV; 0.5A; 20W; SOT32
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.5403 ea
Line Total: USD 10.81

16761 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 20  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
61 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

BUX87
STMicroelectronics

1 : USD 0.923
3 : USD 0.715
10 : USD 0.6643
32 : USD 0.52
86 : USD 0.4914

76 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 13
Multiples : 1

Stock Image

BUX87
STMicroelectronics

13 : USD 0.618
100 : USD 0.6057

16761 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 20
Multiples : 1

Stock Image

BUX87
STMicroelectronics

20 : USD 0.5403
100 : USD 0.4997
500 : USD 0.4897

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Av Current Ic
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic @ Vce Sat
Current Ic Continuous A Max
Current Ic Hfe
Full Power Rating Temperature
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Power Dissipation Ptot Max
Termination Type
Kind Of Package
LoadingGif

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Additional Infomation About Product

BUX87 High voltage NPN power transistor Features High voltage capability (450 V V ) CEO Minimum lot-to-lot spread for reliable operation High DC current gain Applications 1 2 Flyback and forward single transistor low 3 power converters SOT-32 Description The BUX87 is manufactured using high voltage multi-epitaxial planar technology for high Figure 1. Internal schematic diagram switching speeds and high voltage withstand capability. Table 1. Device summary Order code Marking Package Packaging BUX87 BUX87 SOT-32 Tube April 2009 Doc ID 4508 Rev 5 1/9 www.st.com 9 Electrical ratings BUX87 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1000 V CES BE V Collector-emitter voltage (I = 0) 450 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 0.5 A C I Collector peak current (t 5ms) 1 A CM p I Base current 0.3 A B I Base peak current (t 5ms) 0.6 A BM p P Total power dissipation at T = 25 C 40 W TOT c T Storage temperature -65 to 150 stg C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max. 3.1 C/W thj-case 2/9 Doc ID 4508 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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