X-On Electronics has gained recognition as a prominent supplier of 2N6288G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N6288G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N6288G ON Semiconductor

2N6288G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N6288G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 7A 30V 40W NPN
Datasheet: 2N6288G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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MOQ : 1
Multiples : 1
1 : USD 0.6612
10 : USD 0.5221
100 : USD 0.4964
500 : USD 0.478
1000 : USD 0.4684
2800 : USD 0.4684
5600 : USD 0.4684
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Obsolete
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MOQ : 1
Multiples : 1
1 : USD 0.6134
10 : USD 0.5061
100 : USD 0.4976
500 : USD 0.4876
1000 : USD 0.4876
2800 : USD 0.4876
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0
MOQ : 1650
Multiples : 1650
1650 : USD 0.5311
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0
MOQ : 817
Multiples : 817
817 : USD 0.5147
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0
MOQ : 1
Multiples : 1
1 : USD 0.9913
10 : USD 0.8199
100 : USD 0.6566
500 : USD 0.5727
1000 : USD 0.5026
2800 : USD 0.4968
5600 : USD 0.4853
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Obsolete
0
MOQ : 17
Multiples : 1
17 : USD 0.5221
100 : USD 0.4964
500 : USD 0.478
1000 : USD 0.4684
N/A

Obsolete
0
MOQ : 15
Multiples : 1
15 : USD 0.5061
100 : USD 0.4976
500 : USD 0.4876
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Obsolete
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MOQ : 17
Multiples : 1
17 : USD 1.2666
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Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the 2N6288G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6288G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. www.onsemi.com Features High DC Current Gain 7 AMPERE High Current Gain Bandwidth Product POWER TRANSISTORS TO220 Compact Package COMPLEMENTARY SILICON These Devices are PbFree and are RoHS Compliant* 30 50 70 VOLTS, 40 WATTS MAXIMUM RATINGS (Note 1) PNP NPN Rating Symbol Value Unit COLLECTOR 2, 4 COLLECTOR 2, 4 CollectorEmitter Voltage V Vdc CEO 2N6111, 2N6288 30 2N6109 50 1 1 2N6107, 2N6292 70 BASE BASE CollectorBase Voltage V Vdc CB 2N6111, 2N6288 40 EMITTER 3 EMITTER 3 2N6109 60 2N6107, 2N6292 80 4 EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 7.0 Adc C TO220 Collector Current Peak I 10 Adc CM CASE 221A STYLE 1 Base Current I 3.0 Adc B Total Power Dissipation P D 1 2 T = 25 C 40 W C 3 Derate above 25 C 0.32 W/C Operating and Storage Junction T , T 65 to +150 C J stg MARKING DIAGRAM Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2N6xxxG THERMAL CHARACTERISTICS AYWW Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R 3.125 C/W JC 2N6xxx = Specific Device Code xxx = See Table on Page 4 G = PbFree Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION *For additional information on our PbFree strategy and soldering details, please See detailed ordering, marking, and shipping information in download the ON Semiconductor Soldering and Mounting Techniques the package dimensions section on page 4 of this data sheet. Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 11 2N6107/D2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS V Vdc CollectorEmitter Sustaining Voltage (Note 3) CEO(sus) (I = 100 mAdc, I = 0) C B 30 2N6111, 2N6288 50 2N6109 70 2N6107, 2N6292 Collector Cutoff Current I mAdc CEO (V = 20 Vdc, I = 0) CE B 2N6111, 2N6288 1.0 (V = 40 Vdc, I = 0) CE B 2N6109 1.0 (V = 60 Vdc, I = 0) CE B 2N6107, 2N6292 1.0 Collector Cutoff Current I CEX (V = 40 Vdc, V = 1.5 Vdc) CE EB(off) 2N6111, 2N6288 100 Adc (V = 60 Vdc, V = 1.5 Vdc) CE EB(off) 2N6109 100 (V = 80 Vdc, V = 1.5 Vdc) CE EB(off) 2N6107, 2N6292 100 (V = 30 Vdc, V = 1.5 Vdc, T = 150 C) CE EB(off) C 2N6111, 2N6288 2.0 mAdc (V = 50 Vdc, V = 1.5 Vdc, T = 150 C) CE EB(off) C 2N6109 2.0 (V = 70 Vdc, V = 1.5 Vdc, T = 150 C) CE EB(off) C 2N6107, 2N6292 2.0 Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 BE C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 2.0 Adc, V = 4.0 Vdc) C CE 2N6107, 2N6292 30 150 (I = 2.5 Adc, V = 4.0 Vdc) C CE 2N6109 30 150 (I = 3.0 Adc, V = 4.0 Vdc) C CE 2N6111, 2N6288 30 150 (I = 7.0 Adc, V = 4.0 Vdc) C CE All Devices 2.3 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 7.0 Adc, I = 3.0 Adc) 3.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 7.0 Adc, V = 4.0 Vdc) 3.0 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 4) f MHz T (I = 500 mAdc, V = 4.0 Vdc, f = 1.0 MHz) C CE test 2N6288, 2N6292 4.0 2N6107, 2N6109, 2N6111 10 Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) 250 CB E SmallSignal Current Gain h fe (I = 0.5 Adc, V = 4.0 Vdc, f = 50 kHz) 20 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. f = h f T fe test

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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