2N6338, 2N6341 High-Power NPN Silicon Transistors . designed for use in industrialmilitary power amplifier and switching circuit applications. High CollectorEmitter Sustaining Voltage 2N6338, 2N6341 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 T , CASE TEMPERATURE (C) C Figure 1. Power Derating *ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (1) 2N6338 V 100 Vdc CEO(sus) (I = 50 mAdc, I = 0) 2N6341 150 C B Collector Cutoff Current I Adc CEO (V = 50 Vdc, I = 0) 2N6338 CE B 50 (V = 75 Vdc, I = 0) 2N6341 CE B 50 Collector Cutoff Current I CEX (V = Rated V , V = 1.5 Vdc) CE CEO EB(off) 10 Adc (V = Rated V , V = 1.5 Vdc, T = 150 C) CE CEO EB(off) C 1.0 mAdc Collector Cutoff Current (V = Rated V , I = 0) I 10 Adc CB CB E CBO Emitter Cutoff Current (V = 6.0 Vdc, I = 0) I 100 Adc BE C EBO ON CHARACTERISTICS (1) DC Current Gain) h FE (I = 0.5 Adc, V = 2.0 Vdc) C CE 50 (I = 10 Adc, V = 2.0 Vdc) C CE 30 120 (I = 25 Adc, V = 2.0 Vdc) C CE 12 Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 Adc, I = 1.0 Adc) C B 1.0 (I = 25 Adc, I = 2.5 Adc) C B 1.8 BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 Adc, I = 1.0 Adc) C B 1.8 (I = 25 Adc, I = 2.5 Adc) C B 2.5 BaseEmitter On Voltage (I = 10 Adc, V = 2.0 Vdc) V 1.8 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (2) (I = 1.0 Adc, V = 10 Vdc, f = 10 MHz) f 40 MHz C CE test T Output Capacitance (V = 10 Vdc, I = 0, f = 0.1 MHz) C 300 pF CB E ob SWITCHING CHARACTERISTICS Rise Time (V 80 Vdc, I = 10Adc, I = 1.0 Adc, V = 6.0 Vdc) t 0.3 s CC C B1 BE(off) r Storage Time (V 80 Vdc, I = 10 Adc, I = I = 1.0 Adc) t 1.0 s CC C B1 B2 s Fall Time (V 80 Vdc, I = 10 Adc, I = I = 1.0 Adc) t 0.25 s CC C B1 B2 f *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (2) f = h f . T fe test