2N6667, 2N6668 Darlington Silicon Power Transistors Designed for generalpurpose amplifier and low speed switching applications. High DC Current Gain www.onsemi.com h = 3500 (Typ) I = 4.0 Adc FE C CollectorEmitter Sustaining Voltage 200 mAdc PNP SILICON V = 60 Vdc (Min) 2N6667 CEO(sus) DARLINGTON = 80 Vdc (Min) 2N6668 POWER TRANSISTORS Low CollectorEmitter Saturation Voltage V = 2.0 Vdc (Max) I = 5.0 Adc 10 A, 6080 V, 65 W CE(sat) C Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors TO220AB Compact Package Complementary to 2N6387, 2N6388 4 These Devices are PbFree and are RoHS Compliant* COLLECTOR 1 2 BASE 3 TO220 CASE 221A 8 k 120 STYLE 1 MARKING DIAGRAM EMITTER Figure 1. Darlington Schematic 2N666x AYWWG x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping 2N6667G TO220 50 Units/Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please 2N6668G TO220 50 Units/Rail download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 8 2N6667/D2N6667, 2N6668 MAXIMUM RATINGS (Note 1) Rating Symbol 2N6667 2N6668 Unit CollectorEmitter Voltage V 60 80 Vdc CEO CollectorBase Voltage V 60 80 Vdc CB EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 10 Adc C Peak 15 Base Current I 250 mAdc B Total Device Dissipation T = 25 C P 65 W C D Derate above 25 C 0.52 W/ C Total Device Dissipation T = 25 C P 2.0 W A D Derate above 25 C 0.016 W/ C Operating and Storage Junction Temperature Range T , T 65 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R 1.92 C/W JC Thermal Resistance, Junction to Ambient R 62.5 C/W JA ELECTRICAL CHARACTERISTICS (Note 1) (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) 2N6667 V 60 Vdc CEO(sus) (I = 200 mAdc, I = 0) 2N6668 80 C B Collector Cutoff Current (V = 60 Vdc, I = 0) 2N6667 I 1.0 mAdc CE B CEO (V = 80 Vdc, I = 0) 2N6668 1.0 CE B Collector Cutoff Current (V = 60 Vdc, V = 1.5 Vdc) 2N6667 I 300 Adc CE EB(off) CEX (V = 80 Vdc, V ) = 1.5 Vdc) 2N6668 300 CE EB(off (V = 60 Vdc, V ) = 1.5 Vdc, T = 125 C) 2N6667 3.0 mAdc CE EB(off C (V = 80 Vdc, V = 1.5 Vdc, T = 125 C) 2N6668 3.0 CE EB(off) C Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 5.0 mAdc BE C EBO ON CHARACTERISTICS (Note 1) DC Current Gain (I = 5.0 Adc, V = 3.0 Vdc) h 1000 20000 C CE FE (I = 10 Adc, V = 3.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage (I = 5.0 Adc, I = 0.01 Adc) V 2.0 Vdc C B CE(sat) (I = 10 Adc, I = 0.1 Adc) 3.0 C B BaseEmitter Saturation Voltage(I = 5.0 Adc, I = 0.01 Adc) V 2.8 Vdc C B BE(sat) (I = 10 Adc, I = 0.1 Adc) 4.5 C B DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (I = 1.0 Adc, V = 5.0 Vdc, f = 1.0 MHz) h 20 C CE test fe Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 200 pF CB E ob SmallSignal Current Gain (I = 1.0 Adc, V = 5.0 Vdc, f = 1.0 kHz) h 1000 C CE fe Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.