2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
Description
Features
These N-channel enhancement mode field effect transis-
High Density Cell Design for Low R
DS(ON)
tors are produced using ON Semiconductor's
Voltage Controlled Small Signal Switch
proprietary, high cell density, DMOS technology. These
Rugged and Reliable
products have been designed to minimize on-state
High Saturation Current Capability
resistance while providing rugged, reliable, and fast
switching performance. They can be used in most
applications requiring up to 400 mA DC and can deliver
pulsed currents up to 2 A. These products are
particularly suited for low-voltage, low-cur-rent
applications, such as small servo motor control,
power MOSFET gate drivers, and other switching appli-
cations.
D
D
S
G
G
TO-92
1 SOT-23
(TO-236AB)
1. Source 2. Gate 3. Drain S
2N7002/NDS7002A
Ordering Information
Min Order Qty /
Part Number Marking Package Packing Method Immediate Pack
Qty
2N7000 2N7000 TO-92 3L Bulk 10000 / 1000
2N7000-D74Z 2N7000 TO-92 3L Ammo 2000 / 2000
2N7000-D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7000-D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000
NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000
1998 Semiconductor Components Industries, LLC. Publication Order Number:
NDS7002A/D
October-2017, Rev. 32N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
C
Value
Symbol Parameter Unit
2N7000 2N7002 NDS7002A
V Drain-to-Source Voltage 60 V
DSS
V Drain-Gate Voltage (R 1 M 60 V
DGR GS
V Gate-Source Voltage - Continuous 20 V
GSS
Gate-Source Voltage - Non Repetitive (tp < 50 S) 40
I Maximum Drain Current - Continuous 200 115 280 mA
D
Maximum Drain Current - Pulsed 500 800 1500
P Maximum Power Dissipation Derated above 25C 400 200 300 mW
D
3.2 1.6 2.4 mW/C
T T Operating and Storage Temperature Range -55 to 150 -65 to 150 C
J, STG
T Maximum Lead Temperature for Soldering Purposes,
L
300 C
1/16-inch from Case for 10 Seconds
Thermal Characteristics
Values are at T = 25C unless otherwise noted.
C
Value
Symbol Parameter Unit
2N7000 2N7002 NDS7002A
Thermal Resistance, Junction to Ambient
R 312.5 625 417 C/W
JA
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
C
Symbol Parameter Conditions Type Min. Typ. Max. Unit
Off Characteristics
Drain-Source Breakdown
BV V = 0 V, I = 10 AAll 60 V
DSS GS D
Voltage
I Zero Gate Voltage Drain V = 48 V, V = 0 V 2N7000 1 A
DSS DS GS
Current
V = 48 V, V = 0 V, 1
DS GS
mA
T = 125C
C
V = 60 V, V = 0 V 2N7002 1 A
DS GS
NDS7002A
V = 60 V, V = 0 V, 0.5
DS GS
mA
T = 125C
C
I Gate - Body Leakage, V = 15 V, V = 0 V 2N7000
GSSF GS DS
10 nA
Forward
V = 20 V, V = 0 V 2N7002
GS DS
100 nA
NDS7002A
I Gate - Body Leakage, V = -15 V, V = 0 V 2N7000
GSSR GS DS
-10 nA
Reverse
V = -20 V, V = 0 V 2N7002
GS DS
-100 nA
NDS7002A
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