X-On Electronics has gained recognition as a prominent supplier of SIS429DNT-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIS429DNT-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIS429DNT-T1-GE3 Vishay

SIS429DNT-T1-GE3 electronic component of Vishay
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Part No.SIS429DNT-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Trans MOSFET P-CH 30V 20A 8-Pin PowerPAK 1212 T/R
Datasheet: SIS429DNT-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.162 ea
Line Total: USD 972 
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MOQ: 6000  Multiples: 6000
Pack Size: 6000
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Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 6000
Multiples : 6000
6000 : USD 0.162

   
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We are delighted to provide the SIS429DNT-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIS429DNT-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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3.3 mm SiS429DNT www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK 1212-8T Single D TrenchFET power MOSFET D 8 D 7 100 % R and UIS tested g D 6 5 Thin 0.8 mm profile Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 11 2 SS 3 S APPLICATIONS S 4 S 1 G Notebook PC Top View Bottom View - Load switch - Battery switch PRODUCT SUMMARY G - Adaptor switch V (V) -30 DS R max. () at V = -10 V 0.021 DS(on) GS R max. () at V = -4.5 V 0.034 DS(on) GS Q typ. (nC) 15 g D d, e I (A) -20 D P-Channel MOSFET Configuration Single ORDERING INFORMATION Package PowerPAK 1212-8T Lead (Pb)-free and halogen-free SiS429DNT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -30 DS V Gate-source voltage V 20 GS e T = 25 C -20 C e T = 70 C -20 C Continuous drain current (T = 150 C) I J D a, b T = 25 C -10.5 A a, b T = 70 C -8.3 A A Pulsed drain current (t = 100 s) I -50 DM e T = 25 C -20 C Continuous source-drain diode current I S a, b T = 25 C -2.9 A Avalanche current I -20 AS L = 0.1 mH Single-pulse avalanche energy E 20 mJ AS T = 25 C 27.8 C T = 70 C 17.8 C Maximum power dissipation P W D a, b T = 25 C 3.5 A a, b T = 70 C 2.2 A Operating junction and storage temperature range T , T -55 to +150 J stg C f, g Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a, c Maximum junction-to-ambient t 10 s R 29 36 thJA C/W Maximum junction-to-case Steady state R 3.6 4.5 thJC Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. Maximum under steady state conditions is 81 C/W d. Based on T = 25 C C e. Package limited f. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8T is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S19-0832-Rev. C, 30-Sep-2019 Document Number: 62964 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3.3 mm SiS429DNT www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -30 - - V DS GS D V temperature coefficient V /T --31 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -4.5 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -1 - -3 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -30 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I A DSS V = -30 V, V = 0 V, T = 55 C - - -5 DS GS J a On-state drain current I V -10 V, V = -10 V -30 - - A D(on) DS GS V = -10 V, I = -10.5 A - 0.0175 0.0210 GS D a Drain-source on-state resistance R DS(on) V = -4.5 V, I = -8.3 A - 0.0283 0.0340 GS D a Forward transconductance g V = -10 V, I = -10.5 A - 23 - S fs DS D b Dynamic Input capacitance C - 1350 - iss Output capacitance C V = -15 V, V = 0 V, f = 1 MHz - 215 - pF oss DS GS Reverse transfer capacitance C - 185 - rss V = -15 V, V = -10 V, I = -10.5 A - 32 50 DS GS D Total gate charge Q g -15 25 nC Gate-source charge Q V = -15 V, V = -4.5 V, I = -10.5 A -4 - gs DS GS D Gate-drain charge Q -7.5 - gd Gate resistance R f = 1 MHz 1.2 5.8 11.6 g Turn-on delay time t -10 15 d(on) Rise time t -8 15 r V = -15 V, R = 1.8 DD L I -8.4 A, V = -10 V, R = 1 Turn-off delay time t D GEN g -45 70 d(off) Fall time t -12 25 f ns Turn-on delay time t -42 70 d(on) Rise time t -35 60 r V = -15 V, R = 1.8 DD L I -8.4 A, V = -4.5 V, R = 1 Turn-off delay time t D GEN g -40 70 d(off) Fall time t -16 30 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - -20 S C A Pulse diode forward current (t = 100 s) I -- -50 SM Body diode voltage V I = -8.4 A, V = 0 V - -0.85 -1.2 V SD S GS Body diode reverse recovery time t -34 60 ns rr Body diode reverse recovery charge Q -22 40 nC rr I = -8.4 A, di/dt = 100 A/s, F T = 25 C Reverse recovery fall time t J -11 - a ns Reverse recovery rise time t -23 - b Notes a. Pulse test: pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0832-Rev. C, 30-Sep-2019 Document Number: 62964 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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