3.3 mm
SiS429DNT
www.vishay.com
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK 1212-8T Single
D
TrenchFET power MOSFET
D
8
D
7
100 % R and UIS tested
g
D
6
5
Thin 0.8 mm profile
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
11
2
SS
3
S
APPLICATIONS
S
4
S
1
G
Notebook PC
Top View Bottom View
- Load switch
- Battery switch
PRODUCT SUMMARY
G
- Adaptor switch
V (V) -30
DS
R max. () at V = -10 V 0.021
DS(on) GS
R max. () at V = -4.5 V 0.034
DS(on) GS
Q typ. (nC) 15
g
D
d, e
I (A) -20
D
P-Channel MOSFET
Configuration Single
ORDERING INFORMATION
Package PowerPAK 1212-8T
Lead (Pb)-free and halogen-free SiS429DNT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
A
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V -30
DS
V
Gate-source voltage V 20
GS
e
T = 25 C -20
C
e
T = 70 C -20
C
Continuous drain current (T = 150 C) I
J D
a, b
T = 25 C -10.5
A
a, b
T = 70 C -8.3
A
A
Pulsed drain current (t = 100 s) I -50
DM
e
T = 25 C -20
C
Continuous source-drain diode current I
S
a, b
T = 25 C -2.9
A
Avalanche current I -20
AS
L = 0.1 mH
Single-pulse avalanche energy E 20 mJ
AS
T = 25 C 27.8
C
T = 70 C 17.8
C
Maximum power dissipation P W
D
a, b
T = 25 C 3.5
A
a, b
T = 70 C 2.2
A
Operating junction and storage temperature range T , T -55 to +150
J stg
C
f, g
Soldering recommendations (peak temperature) 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
a, c
Maximum junction-to-ambient t 10 s R 29 36
thJA
C/W
Maximum junction-to-case Steady state R 3.6 4.5
thJC
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. Maximum under steady state conditions is 81 C/W
d. Based on T = 25 C
C
e. Package limited
f. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8T is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection
g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S19-0832-Rev. C, 30-Sep-2019 Document Number: 62964
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3.3 mm
SiS429DNT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V V = 0 V, I = -250 A -30 - - V
DS GS D
V temperature coefficient V /T --31 -
DS DS J
I = -250 A mV/C
D
V temperature coefficient V /T -4.5 -
GS(th) GS(th) J
Gate-source threshold voltage V V = V , I = -250 A -1 - -3 V
GS(th) DS GS D
Gate-source leakage I V = 0 V, V = 20 V - - 100 nA
GSS DS GS
V = -30 V, V = 0 V - - -1
DS GS
Zero gate voltage drain current I A
DSS
V = -30 V, V = 0 V, T = 55 C - - -5
DS GS J
a
On-state drain current I V -10 V, V = -10 V -30 - - A
D(on) DS GS
V = -10 V, I = -10.5 A - 0.0175 0.0210
GS D
a
Drain-source on-state resistance R
DS(on)
V = -4.5 V, I = -8.3 A - 0.0283 0.0340
GS D
a
Forward transconductance g V = -10 V, I = -10.5 A - 23 - S
fs DS D
b
Dynamic
Input capacitance C - 1350 -
iss
Output capacitance C V = -15 V, V = 0 V, f = 1 MHz - 215 - pF
oss DS GS
Reverse transfer capacitance C - 185 -
rss
V = -15 V, V = -10 V, I = -10.5 A - 32 50
DS GS D
Total gate charge Q
g
-15 25
nC
Gate-source charge Q V = -15 V, V = -4.5 V, I = -10.5 A -4 -
gs DS GS D
Gate-drain charge Q -7.5 -
gd
Gate resistance R f = 1 MHz 1.2 5.8 11.6
g
Turn-on delay time t -10 15
d(on)
Rise time t -8 15
r V = -15 V, R = 1.8
DD L
I -8.4 A, V = -10 V, R = 1
Turn-off delay time t D GEN g -45 70
d(off)
Fall time t -12 25
f
ns
Turn-on delay time t -42 70
d(on)
Rise time t -35 60
r V = -15 V, R = 1.8
DD L
I -8.4 A, V = -4.5 V, R = 1
Turn-off delay time t D GEN g -40 70
d(off)
Fall time t -16 30
f
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I T = 25 C - - -20
S C
A
Pulse diode forward current (t = 100 s) I -- -50
SM
Body diode voltage V I = -8.4 A, V = 0 V - -0.85 -1.2 V
SD S GS
Body diode reverse recovery time t -34 60 ns
rr
Body diode reverse recovery charge Q -22 40 nC
rr I = -8.4 A, di/dt = 100 A/s,
F
T = 25 C
Reverse recovery fall time t J -11 -
a
ns
Reverse recovery rise time t -23 -
b
Notes
a. Pulse test: pulse width 300 s, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0832-Rev. C, 30-Sep-2019 Document Number: 62964
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000