DMN6040SVTQ
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
I
D
V R Max
(BR)DSS DS(ON)
Low Input Capacitance
T = +25C
A
Low On-Resistance
44m @ V = 10V 5.0A
GS
Fast Switching Speed
60V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
4.3A
60m @ V = 4.5V
GS
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
Case: TSOT26
resistance (R ), yet maintain superior switching performance,
DS(ON) Case Material: Molded Plastic, Green Molding Compound.
making it ideal for high efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
DC-DC Converters
Terminal Connections: See Diagram
Power Management Functions
Terminals: Finish Tin Finish Annealed over Copper Leadframe.
Backlighting
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
TSOT26
D 1 6 D
D 2 5 D
G 3 4 S
Top View
Top View
Equivalent Circuit
Pin Configuration
Ordering Information (Note 5)
Part Number Case Packaging
DMN6040SVTQ-7 TSOT26 3,000/Tape & Reel
DMN6040SVTQ-13 TSOT26 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN6040SVTQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 60 V
VDSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 5.0
A
A
I
D
State 4.0
T = +70C
A
Continuous Drain Current (Note 7) V = 10V
GS
T = +25C 6.3
A
t<10s I A
D
5.0
T = +70C
A
Steady T = +25C 4.3
A
A
I
D
State 3.4
T = +70C
A
Continuous Drain Current (Note 7) V = 5V
GS
T = +25C 5.4
A
t<10s I A
D
4.3
T = +70C
A
Maximum Body Diode Forward Current (Note 7) I 2.1 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 30 A
I
DM
Avalanche Current (Note 8) L = 0.1mH 14.2 A
I
AR
Avalanche Energy (Note 8) L = 0.1mH 10 mJ
E
AR
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
1.2
T = +25C
A
Total Power Dissipation (Note 6) P W
D
0.75
T = +70C
A
Steady State 106 C/W
Thermal Resistance, Junction to Ambient (Note 6) R
JA
t<10s 69 C/W
1.8
T = +25C
A
Total Power Dissipation (Note 7) P W
D
1.1
T = +70C
A
Steady State 68 C/W
Thermal Resistance, Junction to Ambient (Note 7) R
JA
t<10s 44 C/W
Thermal Resistance, Junction to Case (Note 7) 20 C/W
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. I and E rating are based on low frequency and duty cycles to keep T = +25C.
AR AR J
2 of 8
DMN6040SVTQ December 2015
Diodes Incorporated
www.diodes.com
Document number: DS38508 Rev. 1 - 2
ADVANCE INFORMATION