X-On Electronics has gained recognition as a prominent supplier of SIS434DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIS434DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIS434DN-T1-GE3 Vishay

SIS434DN-T1-GE3 electronic component of Vishay
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Part No.SIS434DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 40 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet: SIS434DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9039 ea
Line Total: USD 0.9 
Availability - 75860
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4694
6000 : USD 0.4541
24000 : USD 0.4443

14550
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4355
6000 : USD 0.4355
9000 : USD 0.4355
12000 : USD 0.4355

75860
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9039
10 : USD 0.7498
100 : USD 0.5658
500 : USD 0.4681
1000 : USD 0.437
3000 : USD 0.4163
6000 : USD 0.4025
24000 : USD 0.4002

87
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 36
Multiples : 1
36 : USD 1.1392
50 : USD 1.001

11640
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.7444
12000 : USD 0.6803

2910
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4694
6000 : USD 0.4541
24000 : USD 0.4443

2910
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.0722

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SIS434DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIS434DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SiS434DN Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0076 at V = 10 V TrenchFET Power MOSFET 35 GS 40 12.5 nC 100 % R Tested g 0.0092 at V = 4.5 V 35 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS S POL 3.30 mm 3.30 mm D 1 S 2 S 3 G 4 D 8 D G 7 D 6 D 5 S Bottom View Ordering Information: SiS434DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS a T = 25 C 35 C a T = 70 C 35 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 17.6 A A b, c T = 70 C 14.1 A Pulsed Drain Current I 60 DM Avalanche Current I 30 AS L = 0.1 mH Avalanche Energy E mJ 45 AS a T = 25 C 35 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 3.2 A T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D b, c T = 25 C 3.8 A b, c T = 70 C A 2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 24 33 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Package Limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 C/W. Document Number: 65024 www.vishay.com S09-1091-Rev. A, 15-Jun-09 1SiS434DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V /T V Temperature Coefficient 46 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.2 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 40 A D(on) DS GS V = 10 V, I = 16.2 A 0.0063 0.0076 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 14.7 A 0.0077 0.0092 GS D a g V = 15 V, I = 16.2 A Forward Transconductance 60 S fs DS D b Dynamic Input Capacitance C 1530 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 240 pF oss DS GS Reverse Transfer Capacitance C 100 rss V = 20 V, V = 10 V, I = 16.2 A 25 40 DS GS D Q Total Gate Charge g 12.5 19 nC Gate-Source Charge Q 3.9 V = 20 V, V = 4.5 V, I = 16.2 A gs DS GS D Q Gate-Drain Charge 3.9 gd Gate Resistance R f = 1 MHz 0.2 1.3 2.6 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 20 V, R = 2 15 25 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 12 20 f ns t Turn-On Delay Time 10 15 d(on) t Rise Time V = 20 V, R = 2 10 15 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 715 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 43 S C A a I 35 Pulse Diode Forward Current SM V I = 10 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 30 45 ns rr Q Body Diode Reverse Recovery Charge 33 50 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 20 a ns t Reverse Recovery Rise Time 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65024 2 S09-1091-Rev. A, 15-Jun-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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