IPD50N08S4-13 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 13.2 mW DS(on),max I 50 A D Features PG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N08S4-13 PG-TO252-3-313 4N0813 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 50 A Continuous drain current D C GS 2) 50 T =100C, V =10V C GS 2) I T =25C 200 Pulsed drain current D,pulse C 2) E I =25A 76 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 31 A AS V Gate source voltage - 20 V GS Power dissipation P T =25C 72 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2014-06-30IPD50N08S4-13 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 2.1 K/W thJC SMD version, device on PCB R minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 80 - - V (BR)DSS GS D V V =V , I =33A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25C j V =80V, V =0V, DS GS - 5 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =50A Drain-source on-state resistance - 11.2 13.2 mW DS(on) GS D Rev. 1.0 page 2 2014-06-30