SiS454DN Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.0037 at V = 10 V 35 TrenchFET Power MOSFET GS 20 18.5 nC 100 % R and UIS Tested 0.0054 at V = 4.5 V 35 g GS Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS DC/DC Converter S 3.3 mm 3.3 mm 1 S - Notebook 2 S - POL 3 G 4 D D 8 D 7 D 6 D G 5 Bottom View Ordering Information: N-Channel MOSFET S SiS454DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 20 GS a T = 25 C 35 C a T = 70 C 35 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 25 A A b, c T = 70 C 20 A Pulsed Drain Current I 100 DM Avalanche Current I 30 AS L = 0.1 mH Avalanche Energy E mJ 45 AS a T = 25 C 35 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 3.2 A T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D b, c T = 25 C 3.8 A b, c T = 70 C 2.4 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 24 33 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 C/W. Document Number: 66707 www.vishay.com S12-0214-Rev. B, 30-Jan-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiS454DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V /T V Temperature Coefficient 18 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.3 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 12.2V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 40 A D(on) DS GS V = 10 V, I = 20 A 0.0030 0.0037 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0044 0.0054 GS D a g V = 10 V, I = 20 A Forward Transconductance 70 S fs DS D b Dynamic Input Capacitance C 1900 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 630 pF oss DS GS Reverse Transfer Capacitance C 390 rss V = 10 V, V = 10 V, I = 20 A 35 53 DS GS D Q Total Gate Charge g 18.5 28 nC Gate-Source Charge Q 5.2 V = 10 V, V = 4.5 V, I = 20 A gs DS GS D Q Gate-Drain Charge 7.4 gd Gate Resistance R f = 1 MHz 0.2 0.9 1.8 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 10 V, R = 1 15 25 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 10 15 d(on) t Rise Time V = 10 V, R = 1 10 15 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 35 S C A a I 100 Pulse Diode Forward Current SM V I = 10 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 22 45 ns rr Q Body Diode Reverse Recovery Charge 11 20 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 11 a ns t Reverse Recovery Rise Time 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66707 2 S12-0214-Rev. B, 30-Jan-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000