New Product SiS478DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( ) Q (Typ.) Definition I (A) DS DS(on) g D TrenchFET Power MOSFET 0.020 at V = 10 V 12 GS 100 % R Tested 30 3.6 nC g 0.030 at V = 4.5 V 12 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS Notebook PC S D 3.30 mm 3.30 mm - System Power 1 S - Load Switch 2 S 3 G 4 D 8 G D 7 D 6 D 5 Bottom View S Ordering Information: SiS478DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 25 GS a T = 25 C 12 C a T = 70 C 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 9.4 b, c T = 70 C A 7.4 A Pulsed Drain Current I 40 DM a T = 25 C 12 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.7 Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5mJ AS T = 25 C 15.6 C T = 70 C 10 C P Maximum Power Dissipation W D b, c T = 25 C A 3.2 b, c T = 70 C A 2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 32 39 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 6.5 8 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 81 C/W. e. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71693 www.vishay.com S10-2426-Rev. A, 25-Oct-10 1New Product SiS478DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 30 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 25 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V 10 V, I = 8 A 0.016 0.020 GS D a R Drain-Source On-State Resistance DS(on) V 4.5 V, I = 5 A 0.024 0.030 GS D a g V = 10 V, I = 8 A 20 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 398 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 104 pF oss DS GS C Reverse Transfer Capacitance 58 rss V = 15 V, V = 10 V, I = 8.4 A 7 10.5 DS GS D Q Total Gate Charge g 3.6 5.5 nC Q V = 15 V, V = 4.5 V, I = 8.4 A Gate-Source Charge 1.1 gs DS GS D Gate-Drain Charge Q 1.4 gd R Gate Resistance f = 1 MHz 0.5 2.4 4.8 g Turn-On Delay Time t 12 24 d(on) t Rise Time V = 15 V, R = 2.1 12 24 r DD L I 7 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 10 20 d(off) Fall Time t 918 f ns t Turn-On Delay Time 714 d(on) Rise Time t 918 V = 15 V, R = 2.1 r DD L I 7 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 12 24 d(off) t Fall Time 8 16 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 12 S C A Pulse Diode Forward Current I 40 SM V I = 5 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 13 26 ns rr Body Diode Reverse Recovery Charge Q 510 nC rr I = 8 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 7 a ns t Reverse Recovery Rise Time 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71693 2 S10-2426-Rev. A, 25-Oct-10