Si3900DV Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.125 at V = 4.5 V 2.4 GS TrenchFET Power MOSFET 20 0.200 at V = 2.5 V 1.8 GS Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View G1 D1 1 6 D D 1 2 3 mm S2 S1 5 2 G2 D2 3 4 G G 1 2 2.85 mm S S 1 2 Ordering Information: Si3900DV-T1-E3 (Lead (Pb)-free) Si3900DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 20 DS V Gate-Source Voltage V 12 GS T = 25 C 2.4 2.0 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 1.7 1.4 A A I Pulsed Drain Current (10 s Pulse Width) 8 DM a I 1.05 0.75 Continuous Source Current (Diode Conduction) S T = 25 C 1.15 0.83 A a P W Maximum Power Dissipation D T = 85 C 0.59 0.53 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 93 110 a R Maximum Junction-to-Ambient thJA Steady State 130 150 C/W Maximum Junction-to-Foot (Drain) Steady State R 75 90 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71178 www.vishay.com S09-2275-Rev. D, 02-Nov-09 1Si3900DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 85 C 10 DS GS J a I V 5 V, V = 4.5 V 5A On-State Drain Current D(on) DS GS V = 4.5 V, I = 2.4 A 0.100 0.125 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 1.0 A 0.160 0.200 GS D a g V = 5 V, I = 2.4 A 5S Forward Transconductance fs DS D a V I = 1.05 A, V = 0 V 0.79 1.10 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 2.1 4.0 g Q V = 10 V, V = 4.5 V, I = 2.4 A Gate-Source Charge 0.3 nC gs DS GS D Gate-Drain Charge Q 0.4 gd t Turn-On Delay Time 10 17 d(on) Rise Time t 30 50 V = 10 V, R = 10 r DD L I 1 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 14 25 ns d(off) Fall Time t 612 f t I = 3.0 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 30 50 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 10 T = - 55 C V = 4.5 V thru 3.5 V GS C 8 8 3 V 25 C 125 C 6 6 2.5 V 4 4 2 V 2 2 1.5 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1234 5 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71178 2 S09-2275-Rev. D, 02-Nov-09 I - Drain Current (A) D I - Drain Current (A) D