Si3865BDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS2 DS(on) D Definition 0.060 at V = 4.5 V 2.9 IN 60 m Low R TrenchFET : 1.8 V Rated DS(on) 1.8 to 8 0.100 at V = 2.5 V 2.2 IN 1.8 V to 8 V Input 0.175 at V = 1.8 V 1.7 IN 1.5 V to 8 V Logic Level Control Low Profile, Small Footprint TSOP-6 Package 3000 V ESD Protection On Input Switch, V DESCRIPTION ON/OFF Adjustable Slew-Rate The Si3865BDV includes a p- and n-channel MOSFET in a Compliant to RoHS Directive 2002/95/EC single TSOP-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level- shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si3865BDV operates on supply lines from 1.8 V to 8 V, and can drive loads up to 2.9 A. APPLICATION CIRCUITS Si3865BDV 40 I = 1 A L V = 3 V 2, 3 ON/OFF 4 C = 10 F 32 i V OUT V IN C = 1 F o t d(off) Q2 t R1 C1 f 6 6 24 16 5 ON/OFF LOAD t C o r t d(on) Q1 8 C i 0 1 02468 R2 R2 (k) GND R2 Note: For R2 switching variations with other V /R1 IN combinations See Typical Characteristics Switching Variation R2 at V = 2.5 V, R1 = 20 k IN The Si3865BDV is ideally suited for high-side load switching COMPONENTS in portable applications. The integrated N-Channel level-shift R1 Pull-Up Resistor Typical 10 k to 1 M * device saves space by reducing external components. The R2 Optional Slew-Rate Control Typical 0 to 100 k * slew rate is set externally so that rise-times can be tailored to different load types. C1 Optional Slew-Rate Control Typical 1000 pF * Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 72848 www.vishay.com S10-2142-Rev. D, 20-Sep-10 1 Time (S)Si3865BDV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si3865BDV 4 2, 3 TSOP-6 D2 S2 Top View Q2 6 R2 R1, C1 1 6 R1, C1 D2 ON/OFF 5 2 Q1 5 ON/OFF D2 S2 3 4 1 Ordering Information: Si3865BDV-T1-E3 (Lead (Pb)-free) R2 Si3865BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Input Voltage V 8 IN V V On/Off Voltage 8 ON/OFF a, b 2.9 Continuous I Load Current L b, c 6 A Pulsed a I - 1 Continuous Intrinsic Diode Conduction S a P 0.83 W Maximum Power Dissipation D T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) ESD 3 kV THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a R 125 150 Maximum Junction-to-Ambient (continuous current) thJA C/W R Maximum Junction-to-Foot (Q2) 40 55 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Off Characteristics I V = 8 V, V = 0 V Reverse Leakage Current 1A FL IN ON/OFF Diode Forward Voltage V I = - 1 A - 0.77 - 1 V SD S OnN Characteristics V Input Voltage Range 1.8 8 V IN V = 4.5 V 0.045 0.060 IN R V = 1.5 V, I = 1 A V = 2.5 V On-Resistance (P-Channel) at 1 A 0.075 0.100 DS(on) ON/OFF D IN V = 1.8 V 0.135 0.175 IN V 0.2 V, V = 5 V, V = 1.5 V 1 IN-OUT IN ON/OFF I On-State (P-Channel) Drain-Current A D(on) V 0.3 V, V = 3 V, V = 1.5 V 1 IN-OUT IN ON/OFF Notes: a. Surface Mounted on FR4 board. b. V = 8 V, V = 8 V, T = 25 C. IN ON/OFF A c. Pulse test: pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72848 2 S10-2142-Rev. D, 20-Sep-10