Si3585CDV Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs a V (V) R ( ) Max. I (A) Q (Typ.) DS DS(on) D g 100 % R Tested g 0.058 at V = 4.5 V 3.9 GS Material categorization: N-Channel 20 2.9 nC 0.078 at V = 2.5 V 3.3 GS For definitions of compliance please see 0.195 at V = - 4.5 V - 2.1 GS www.vishay.com/doc 99912 P-Channel - 20 1.6 nC 0.316 at V = - 2.5 V - 1.7 GS APPLICATIONS Load Switch for Portable Devices DC/DC Converters Drivers: Motor, Solenoid, Relay TSOP-6 Top View D S 1 2 G D 1 1 6 1 G 2 3 mm S 5 S 2 2 1 G 1 Marking Code EC XXX G D 3 4 2 2 Lot Traceability and Date Code Part Code S D 1 2 2.85 mm N-Channel MOSFET P-Channel MOSFET Ordering Information: Si3585CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol N-ChannelP-ChannelUnit Drain-Source Voltage V 20 - 20 DS V Gate-Source Voltage V 12 GS T = 25 C 3.9 - 2.1 C T = 70 C 3.1 - 1.7 C I Continuous Drain Current (T = 150 C) D J b, c b, c T = 25 C 3.5 - 1.9 A b, c b, c T = 70 C 2.8 - 1.5 A A Pulsed Drain Current (t = 300 s) I 12 - 5 DM T = 25 C 1.2 - 1.1 C Source Drain Current Diode Current I S b, c b, c T = 25 C 0.9 - 0.9 A T = 25 C 1.4 1.3 C T = 70 C 0.9 0.8 C Maximum Power Dissipation P W D b, c b, c T = 25 C 1.1 1.1 A b, c b, c T = 70 C 0.7 0.7 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. b, d Maximum Junction-to-Ambient t 5 s R 93 110 97 115 thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 75 90 78 95 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 150 C/W for n-channel and 155 C/W for p-channel. Document Number: 67470 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-1562-Rev. C, 15-Jul-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si3585CDV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = 0 V, I = 250 A N-Ch 20 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 20 GS D I = 250 A N-Ch 15 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 16.2 D mV/C I = 250 A N-Ch - 2.8 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 2.5 D V = V , I = 250 A N-Ch 0.6 1.5 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.6 - 1.5 DS GS D N-Ch 100 I V = 0 V, V = 12 V Gate-Source Leakage nA GSS DS GS P-Ch 100 V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 20 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V 5 V, V = 4.5 V N-Ch 12 DS GS b I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 5 DS GS V = 4.5 V, I = 2.5 A N-Ch 0.048 0.058 GS D V = - 4.5 V, I = - 1.9 A P-Ch 0.162 0.195 GS D b R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 1 A N-Ch 0.065 0.078 GS D V = - 2.5 V, I = - 1 A P-Ch 0.263 0.316 GS D V = 10 V, I = 35 A N-Ch 12 DS D b g S Forward Transconductance fs V = - 10 V, I = - 1.9 A P-Ch 1 DS D a Dynamic N-Ch 150 C Input Capacitance iss N-Channel P-Ch 210 V = 10 V, V = 0 V, f = 1 MHz DS GS N-Ch 53 C Output Capacitance pF oss P-Ch 50 P-Channel N-Ch 22 V = - 10 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 35 V = 10 V, V = 10 V, I = 3.5 A N-Ch 3.2 4.8 DS GS D V = - 10 V, V = - 10 V, I = - 1.9 A P-Ch 6 9 DS GS D Total Gate Charge Q g N-Ch 1.6 2.4 N-Channel P-Ch 2.9 4.3 nC V = 10 V, V = 4.5 V, I = 3.5 A DS GS D N-Ch 0.3 Q Gate-Source Charge gs P-Ch 0.6 P-Channel N-Ch 0.4 V = - 10 V, V = - 4.5 V, I = - 1.9 A DS GS D Q Gate-Drain Charge gd P-Ch 0.9 N-Ch 0.9 4.8 9.6 R Gate Resistance f = 1 MHz g P-Ch 1.2 6.2 12.4 www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 67470 2 S13-1562-Rev. C, 15-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000