Si3590DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition TrenchFET Power MOSFET 0.077 at V = 4.5 V 3 GS N-Channel 30 Ultra Low R N- and P-Channel for High DS(on) 0.120 at V = 2.5 V 2 GS Efficiency 0.170 at V = - 4.5 V - 2 GS Optimized for High-Side/Low-Side P-Channel - 30 Minimized Conduction Losses 0.300 at V = - 2.5 V - 1.2 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Portable Devices Including PDAs, Cellular Phones and Pagers D S 1 2 TSOP-6 T op V i e w G1 D1 1 6 G 2 3 mm S2 5 S1 2 G 1 G2 D2 3 4 2.85 mm S D 1 2 Ordering Information: Si3590DV-T1-E3 (Lead (Pb)-free) Si3590DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A N-Channel P-Channel Parameter Symbol Unit 10 s Steady State 10 s Steady State V Drain-Source Voltage 30 - 30 DS V Gate-Source Voltage V 12 12 GS T = 25 C 3 2.5 - 2 - 1.7 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 2.3 2.0 - 1.6 - 1.3 A A I Pulsed Drain Current 8- 8 DM a I 1.05 0.75 - 1.05 - 0.75 Continuous Source Current (Diode Conduction) S T = 25 C 1.15 0.83 1.15 0.83 A a P W Maximum Power Dissipation D T = 70 C 0.70 0.53 0.70 0.53 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. t 10 s 93 110 93 110 a R Maximum Junction-to-Ambient thJA Steady State 130 150 130 150 C/W Maximum Junction-to-Foot (Drain) Steady State R 75 90 75 90 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72032 www.vishay.com S09-1927-Rev. C, 28-Sep-09 1Si3590DV Vishay Siliconix SPECIFICATIONS T = 25C, unless otherwise noted J Parameter Symbol Test Condition Min. Typ.Max.Unit Static V = V , I = 250 A N-Ch 0.6 1.5 DS GS D Gate Threshold Voltage V V GS(th) V = V , I = - 250 A P-Ch - 0.6 - 1.5 DS GS D N-Ch 100 I V = 0 V, V = 12 V Gate-Body Leakage nA GSS DS GS P-Ch 100 V = 30 V, V = 0 V N-Ch 1 DS GS V = - 30 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C N-Ch 5 DS GS J V = - 30 V, V = 0 V, T = 55 C P-Ch - 5 DS GS J V 5 V, V = 4.5 V N-Ch 5 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 5 DS GS V = 4.5 V, I = 3 A N-Ch 0.062 0.077 GS D V = - 4.5 V, I = - 2 A P-Ch 0.135 0.170 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 2 A N-Ch 0.095 0.120 GS D V = - 2.5 V, I = - 1.2 A P-Ch 0.235 0.300 GS D V = 5 V, I = 3 A N-Ch 10 DS D a g S Forward Transconductance fs V = - 5 V, I = - 2 A P-Ch 5 DS D I = 1.05 A, V = 0 V N-Ch 0.80 1.10 S GS a V V Diode Forward Voltage SD I = - 1.05 A, V = 0 V P-Ch - 0.83 - 1.10 S GS b Dynamic N-Ch 3 4.5 Total Gate Charge Q g N-Channel P-Ch 3.8 6 V = 15 V, V = 4.5 V, I = 2 A DS GS D N-Ch 0.6 Gate-Source Charge Q nC gs P-Ch 0.6 P-Channel N-Ch 1.0 V = - 15 V, V = - 4.5 V, I = - 2 A DS GS D Gate-Drain Charge Q gd P-Ch 1.5 N-Ch 5 8 Turn-On Delay Time t d(on) N-Channel P-Ch 5 8 V = 15 V, R = 15 DD L N-Ch 12 23 Rise Time t I 1 A, V = 10 V, R = 6 r D GEN g P-Ch 15 23 N-Ch 13 23 P-Channel Turn-Off Delay Time t ns d(off) P-Ch 20 30 V = - 15 V, R = 15 DD L N-Ch 7 12 I - 1 A, V = - 10 V, R = 6 D GEN g Fall Time t f P-Ch 20 30 I = 1.05 A, dI/dt = 100 A/s N-Ch 15 25 F t Source-Drain Reverse Recovery Time rr I = - 1.05 A, dI/dt = 100 A/s P-Ch 18 30 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72032 2 S09-1927-Rev. C, 28-Sep-09