Si3865DDV www.vishay.com Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY Low R TrenchFET : 1.5 V rated DS(on) V (V ) (V) R ()I (A) IN DS2 DS(on) D 1.5 V to 12 V input 0.054 at V = 4.5 V 3.9 IN 1.8 V to 8 V logic level control 0.077 at V = 2.5 V 3.2 IN 1.5 to 12 0.106 at V = 1.8 V 2.8 Low profile, small footprint TSOP-6 package IN 0.165 at V = 1.5 V 2.2 IN 2100 V ESD protection on input switch, V ON/OFF Adjustable slew-rate DESCRIPTION Material categorization: for definitions of compliance The Si3865DDV includes a p- and n-channel MOSFET in a please see www.vishay.com/doc 99912 single TSOP-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The APPLICATIONS n-channel, with an external resistor, can be used as a Load switch with level-shift gate drive level-shift to drive the p-channel load-switch. The n-channel Slew-rate control MOSFET has internal ESD protection and can be driven by logic signals as low as 1.8 V. The Si3865DDV operates Portable / consumer devices on supply lines from 1.5 V to 12 V, and can drive loads up to 2.8 A. APPLICATION CIRCUITS 2, 3 4 28 V OUT V IN t f Q2 R1 C1 6 6 21 t d(o) 5 14 ON/OFF I = 1 A L C LOAD o V = 3 V ON/OFF Q1 C = 10 F i t r C = 1 F o 7 C i t d(on) 1 R2 0 GND 02468 10 R2 R (k) 2 Switching Variation R2 at V = 2.5 V, R1 = 20 k IN The Si3865DDV is ideally suited for high-side load switching COMPONENTS in portable applications. The integrated n-channel level-shift a R1 Pull-Up Resistor Typical 10 k to 1 M device saves space by reducing external components. The a R2 Optional Slew-Rate Control Typical 0 to 100 k slew rate is set externally so that rise-times can be tailored C1 Optional Slew-Rate Control Typical 1000 pF to different load types. Note a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. S14-1845-Rev. D, 08-Sep-14 Document Number: 67998 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Time (s)Si3865DDV www.vishay.com Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si3865DDV TSOP-6 4 2, 3 S 2 D2 S2 4 ON/OFF Q2 5 R1, C1 6 6 R1, C1 3 Q1 5 D ON/OFF 2 2 D 2 1 R2 1 Top View R2 Marking Code: IK Ordering Information: Si3865DDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Input Voltage V (V)12 IN DS2 V On/Off Voltage V 8 ON/OFF a, b Continuous 2.8 Load Current I L b, c Pulsed 6 A a Continuous Intrinsic Diode Conduction I -1 S a Maximum Power Dissipation P 0.83 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 )ESD 2 kV THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a Maximum Junction-to-Ambient (Continuous Current) R 130 150 thJA C/W Maximum Junction-to-Foot (Q2) R 75 90 thJF SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT OFF Characteristics Reverse Leakage Current I V = 12 V, V = 0 V - - 1 A FL IN ON/OFF Diode Forward Voltage V I = -1 A - -0.77 -1 V SD S ON Characteristics Input Voltage Range V 1.5 - 12 V IN V = 4.5 V - 0.045 0.054 IN V = 2.5 V - 0.063 0.077 IN On-Resistance (P-Channel) at 1 A R V = 1.8 V, I = 1 A DS(on) ON/OFF D V = 1.8 V - 0.085 0.106 IN V = 1.5 V - 0.110 0.165 IN V 0.2 V, V = 5 V, V = 1.8 V 1 - - IN-OUT IN ON/OFF On-State (P-Channel) Drain-Current I A D(on) V 0.3 V, V = 3 V, V = 1.8 V 1 - - IN-OUT IN ON/OFF Notes a. Surface mounted on FR4 board. b. V = 12 V, V = 8 V, T = 25 C. IN ON/OFF A c. Pulse test: pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1845-Rev. D, 08-Sep-14 Document Number: 67998 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000
