X-On Electronics has gained recognition as a prominent supplier of SI3865DDV-T1-GE3 Power Switch ICs - Power Distribution across the USA, India, Europe, Australia, and various other global locations. SI3865DDV-T1-GE3 Power Switch ICs - Power Distribution are a product manufactured by Vishay. We provide cost-effective solutions for Power Switch ICs - Power Distribution, ensuring timely deliveries around the world.

SI3865DDV-T1-GE3 Vishay

SI3865DDV-T1-GE3 electronic component of Vishay
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Part No.SI3865DDV-T1-GE3
Manufacturer: Vishay
Category: Power Switch ICs - Power Distribution
Description: Vishay Semiconductors Power Switch ICs - Power Distribution 12V 2.8A .83W
Datasheet: SI3865DDV-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2768 ea
Line Total: USD 830.4 
Availability - 14550
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
14550
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2768
6000 : USD 0.2576
9000 : USD 0.2422
15000 : USD 0.2374

5820
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2506
6000 : USD 0.2506
9000 : USD 0.2506
12000 : USD 0.2506
15000 : USD 0.2506

579
Ship by Tue. 19 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1757
10 : USD 0.8429
30 : USD 0.6333
100 : USD 0.4192
500 : USD 0.3215
1000 : USD 0.2795

64861
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5808
10 : USD 0.4391
100 : USD 0.3591
3000 : USD 0.31

2402
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3
Multiples : 1
3 : USD 0.6068
25 : USD 0.5426
45 : USD 0.4406
123 : USD 0.4155
3000 : USD 0.4014

14550
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2935
6000 : USD 0.2603
9000 : USD 0.2577
15000 : USD 0.256

14550
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2722
6000 : USD 0.2414
9000 : USD 0.239
15000 : USD 0.2374

2910
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4283

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Number of Outputs
Current Limit
On Resistance - Max
Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Type
Supply Current - Max
Series
Packaging
Input Voltage Max
Product
Brand
Input Voltage Min
Maximum Power Dissipation
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Supply Voltage - Max
Supply Voltage - Min
Taric
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We are delighted to provide the SI3865DDV-T1-GE3 from our Power Switch ICs - Power Distribution category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3865DDV-T1-GE3 and other electronic components in the Power Switch ICs - Power Distribution category and beyond.

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Si3865DDV www.vishay.com Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY Low R TrenchFET : 1.5 V rated DS(on) V (V ) (V) R ()I (A) IN DS2 DS(on) D 1.5 V to 12 V input 0.054 at V = 4.5 V 3.9 IN 1.8 V to 8 V logic level control 0.077 at V = 2.5 V 3.2 IN 1.5 to 12 0.106 at V = 1.8 V 2.8 Low profile, small footprint TSOP-6 package IN 0.165 at V = 1.5 V 2.2 IN 2100 V ESD protection on input switch, V ON/OFF Adjustable slew-rate DESCRIPTION Material categorization: for definitions of compliance The Si3865DDV includes a p- and n-channel MOSFET in a please see www.vishay.com/doc 99912 single TSOP-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The APPLICATIONS n-channel, with an external resistor, can be used as a Load switch with level-shift gate drive level-shift to drive the p-channel load-switch. The n-channel Slew-rate control MOSFET has internal ESD protection and can be driven by logic signals as low as 1.8 V. The Si3865DDV operates Portable / consumer devices on supply lines from 1.5 V to 12 V, and can drive loads up to 2.8 A. APPLICATION CIRCUITS 2, 3 4 28 V OUT V IN t f Q2 R1 C1 6 6 21 t d(o) 5 14 ON/OFF I = 1 A L C LOAD o V = 3 V ON/OFF Q1 C = 10 F i t r C = 1 F o 7 C i t d(on) 1 R2 0 GND 02468 10 R2 R (k) 2 Switching Variation R2 at V = 2.5 V, R1 = 20 k IN The Si3865DDV is ideally suited for high-side load switching COMPONENTS in portable applications. The integrated n-channel level-shift a R1 Pull-Up Resistor Typical 10 k to 1 M device saves space by reducing external components. The a R2 Optional Slew-Rate Control Typical 0 to 100 k slew rate is set externally so that rise-times can be tailored C1 Optional Slew-Rate Control Typical 1000 pF to different load types. Note a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. S14-1845-Rev. D, 08-Sep-14 Document Number: 67998 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Time (s)Si3865DDV www.vishay.com Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si3865DDV TSOP-6 4 2, 3 S 2 D2 S2 4 ON/OFF Q2 5 R1, C1 6 6 R1, C1 3 Q1 5 D ON/OFF 2 2 D 2 1 R2 1 Top View R2 Marking Code: IK Ordering Information: Si3865DDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Input Voltage V (V)12 IN DS2 V On/Off Voltage V 8 ON/OFF a, b Continuous 2.8 Load Current I L b, c Pulsed 6 A a Continuous Intrinsic Diode Conduction I -1 S a Maximum Power Dissipation P 0.83 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 )ESD 2 kV THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a Maximum Junction-to-Ambient (Continuous Current) R 130 150 thJA C/W Maximum Junction-to-Foot (Q2) R 75 90 thJF SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT OFF Characteristics Reverse Leakage Current I V = 12 V, V = 0 V - - 1 A FL IN ON/OFF Diode Forward Voltage V I = -1 A - -0.77 -1 V SD S ON Characteristics Input Voltage Range V 1.5 - 12 V IN V = 4.5 V - 0.045 0.054 IN V = 2.5 V - 0.063 0.077 IN On-Resistance (P-Channel) at 1 A R V = 1.8 V, I = 1 A DS(on) ON/OFF D V = 1.8 V - 0.085 0.106 IN V = 1.5 V - 0.110 0.165 IN V 0.2 V, V = 5 V, V = 1.8 V 1 - - IN-OUT IN ON/OFF On-State (P-Channel) Drain-Current I A D(on) V 0.3 V, V = 3 V, V = 1.8 V 1 - - IN-OUT IN ON/OFF Notes a. Surface mounted on FR4 board. b. V = 12 V, V = 8 V, T = 25 C. IN ON/OFF A c. Pulse test: pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1845-Rev. D, 08-Sep-14 Document Number: 67998 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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