New Product Si3932DV Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.058 at V = 10 V TrenchFET Power MOSFET 3.7 GS 30 1.8 nC 100 % R Tested g 0.073 at V = 4.5 V 3.3 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Applications TSOP-6 DC/DC Converters Top View G1 D1 1 6 D D 1 2 3 mm S2 S1 Marking Code 5 2 MH XXX Lot Traceability G2 D2 and Date Code 3 4 G G 1 2 Part Code 2.85 mm S S 1 2 Ordering Information: Si3932DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 3.7 C T = 70 C 3 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 3.4 b, c T = 70 C A A 2.7 I Pulsed Drain Current 15 DM T = 25 C 1.17 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 0.95 T = 25 C 1.4 C T = 70 C 0.9 C Maximum Power Dissipation P W D b, c T = 25 C A 1.14 b, c T = 70 C A 0.73 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 93 110 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot Steady State R 75 90 thJF Notes: a. T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 150 C/W. Document Number: 65736 www.vishay.com S10-0642-Rev. A, 22-Mar-10 1New Product Si3932DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 29 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.2 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 3.4 A 0.047 0.058 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 3.0 A 0.058 0.073 GS D a g V = 15 V, I = 3.4 A 10 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 235 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 45 pF oss DS GS C Reverse Transfer Capacitance 16 rss V = 15 V, V = 10 V, I = 3.4 A 3.7 6 DS GS D Q Total Gate Charge g 1.8 3 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 3.4 A 0.74 gs DS GS D Q Gate-Drain Charge 0.42 gd R Gate Resistance f = 1 MHz 1 5 10 g t Turn-On Delay Time 10 20 d(on) t Rise Time V = 15 V, R = 5.6 15 30 r DD L I 2.7 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 10 20 d(off) Fall Time t 10 20 f ns t Turn-On Delay Time 510 d(on) Rise Time t 15 30 V = 15 V, R = 5.6 r DD L I 2.7 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 10 20 d(off) Fall Time t 10 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 1.17 S C A I Pulse Diode Forward Current 15 SM V I = 2.7 A, V = 0 V Body Diode Voltage 0.85 1.2 V SD S GS t Body Diode Reverse Recovery Time 10 20 ns rr Q Body Diode Reverse Recovery Charge 410 nC rr I = 2.7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 6 a ns t Reverse Recovery Rise Time 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65736 2 S10-0642-Rev. A, 22-Mar-10