Si3476DV Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a 100 % R Tested V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g g Material categorization: 0.093 at V = 10 V 4.6 GS For definitions of compliance please see 0.108 at V = 6 V 80 4.3 2.6 GS www.vishay.com/doc 99912 0.126 at V = 4.5 V 4 GS APPLICATIONS Load Switch for Portable Applications LED Backlight Switch DC/DC Converter Boost Converter TSOP-6 D Top View (1, 2, 5, 6) D 1 6 D Marking Code G 3 mm D 5 D 2 (3) BG XX Lot Tracea bility (4) G S 3 4 and Date Code S Part Code N-Channel MOSFET 2.85 mm Ordering Information: Si3476DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 80 DS V Gate-Source Voltage V 20 GS T = 25 C 4.6 C T = 70 C 3.7 C Continuous Drain Current (T = 150 C) I J D b,c T = 25 C A A 3.5 b,c T = 70 C A 2.8 I Pulsed Drain Current (t = 100 s) 18 DM T = 25 C 3 C I Continuous Source-Drain Diode Current A S b,c T = 25 C A 1.7 T = 25 C 3.6 C T = 70 C 2.3 C Maximum Power Dissipation P W D b,c T = 25 C A 2 b,c T = 70 C 1.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b,d R t 5 s 50 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 28 35 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 C/W. Document Number: 62884 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1818-Rev. A, 12-Aug-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Y Y Si3476DV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 80 V DS GS D V Temperature Coefficient V /T 36 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.8 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 80 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 80 V, V = 0 V, T = 85 C 10 DS GS J a I V = 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 3.5 A 0.077 0.093 GS D a R V = 6 V, I = 3.2 A 0.090 0.108 Drain-Source On-State Resistance DS(on) GS D V = 4.5 V, I = 3 A 0.105 0.126 GS D g V = 15 V, I = 3.5 A Forward Transconductance 7S fs DS D b Dynamic C Input Capacitance 195 iss C V = 40 V, V = 0 V, f = 1 MHz Output Capacitance 116 pF oss DS GS C Reverse Transfer Capacitance 16 rss V = 40 V, V = 10 V, I = 3.5 A 4.9 7.5 DS GS D Total Gate Charge Q g 2.6 5 nC Gate-Source Charge Q V = 40 V, V = 4.5 V, I = 3.5 A 0.8 gs DS GS D Q Gate-Drain Charge 1.3 gd Gate Resistance R f = 1 MHz 0.82 4.2 8.2 g t Turn-On Delay Time 816 d(on) Rise Time t 48 V = 40 V, R = 14.3 r DD L I 2.8 A, V = 10 V, R = 1 t Turn-Off DelayTime D GEN g 14 21 d(off) t Fall Time 36 f ns t Turn-On Delay Time 26 40 d(on) t Rise Time 50 75 r V = 40 V, R = 14.3 DD L I 2.8 A, V = 4.5 V, R = 1 t D GEN g Turn-Off DelayTime 12 20 d(off) t Fall Time 15 23 f Drain-Source Body Diode Characteristics I T = 25 C Continous Source-Drain Diode Current 3 S C A I Pulse Diode Forward Current (t = 100 s) 18 SM V I = 2.8 A Body Diode Voltage 0.85 1.2 V SD S Q Body Diode Reverse Recovery Charge 13 20 nC rr Body Diode Reverse Recovery Time t 20 30 rr I = 2.8 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 10.5 ns a Reverse Recovery Rise Time t 9.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62884 2 S13-1818-Rev. A, 12-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000