Si3460DDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.028 at V = 4.5 V 7.9 GS TrenchFET Power MOSFET 20 0.032 at V = 2.5 V 7.4 6.7 nC 100 % R Tested GS g 100 % UIS Tested 0.038 at V = 1.8 V 6.8 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS TSOP-6 Top View DC/DC Converters Boost Converters D D D 1 6 Load Switch (1, 2, 5, 6) 3 mm D D 5 2 Marking Code BA XXX G G S 3 4 Lot Traceability (3) and Date Code Part Code (4) 2.85 mm S Ordering Information: Si3460DDV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS T = 25 C 7.9 C T = 70 C 6.3 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 6.2 A a, b T = 70 C 5.0 A A Pulsed Drain Current I 20 DM T = 25 C 2.2 C Continuous Source-Drain Diode Current I S a, b T = 25 C 1.4 A Avalanche Current I 8 AS Single Avalanche Energy E 3.2 mJ AS T = 25 C 2.7 C T = 70 C 1.7 C Maximum Power Dissipation P W D a, b T = 25 C 1.7 A a, b T = 70 C 1.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c t 5 s R 61 74 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 38 46 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 120 C/W. d. Based on T = 25 C. C Document Number: 66572 www.vishay.com S10-0789-Rev. A, 05-Apr-10 1Si3460DDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V DS GS D V Temperature Coefficient V /T 21 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 70 C 10 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 20 A D(on) DS GS V = 4.5 V, I = 5.1 A 0.023 0.028 GS D a Drain-Source On-State Resistance R V = 2.5 V, I = 4.7 A 0.027 0.032 DS(on) GS D V = 1.8 V, I = 2.5 A 0.031 0.038 GS D a Forward Transconductance g V = 10 V, I = 5.1 A 35 S fs DS D b Dynamic Input Capacitance C 666 iss Output Capacitance C 93V = 10 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 41 rss V = 10 V, V = 8 V, I = 5 A 12 18 DS GS D Total Gate Charge Q g 6.7 10.1 nC Gate-Source Charge Q 0.95V = 10 V, V = 4.5 V, I = 5 A gs DS GS D Gate-Drain Charge Q 0.5 gd Gate Resistance R f = 1 MHz 0.4 2.1 4.2 g Turn-On Delay Time t 612 d(on) Rise Time t 1120 r V = 10 V, R = 2 DD L I 5 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 2132 D GEN g d(off) Fall Time t 816 f ns Turn-On Delay Time t 510 d(on) Rise Time t 1218 r V = 10 V, R = 2 DD L I 5 A, V = 8 V, R = 1 Turn-Off Delay Time t 19D GEN g 29 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 2.2 S C A Pulse Diode Forward Current I 20 SM Body Diode Voltage V I = 5 A, V = 0 V 0.8 1.2 V SD S GS 11 20 ns Body Diode Reverse Recovery Time t rr Body Diode Reverse Recovery Charge Q 36 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 7 a ns Reverse Recovery Rise Time t 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66572 2 S10-0789-Rev. A, 05-Apr-10