New Product Si3459BDV Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.216 at V = - 10 V - 2.9 TrenchFET Power MOSFET GS - 60 4.4 nC 100 % R Tested 0.288 at V = - 4.5 V g - 2.5 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch TSOP-6 S Top View D D 1 6 3 mm D 5 D 2 G Marking Code AS XXX G S 3 4 Lot Traceability and Date Code Part Code 2.85 mm D Ordering Information: Si3459BDV-T1-E3 (Lead (Pb)-free) Si3459BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 60 DS V V Gate-Source Voltage 20 GS T = 25 C - 2.9 C T = 70 C - 2.3 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 2.2 A a, b T = 70 C A - 1.8 A Pulsed Drain Current I - 8 DM T = 25 C - 2.9 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 1.7 A T = 25 C 3.3 C T = 70 C 2.1 C Maximum Power Dissipation P W D a, b T = 25 C A 2 a, b T = 70 C 1.3 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c t 5 s R 53 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 32 38 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 110 C/W. d. Based on T = 25 C. C Document Number: 69954 www.vishay.com S09-0765-Rev. B, 04-May-09 1New Product Si3459BDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 60 V DS GS D V /T V Temperature Coefficient - 65 DS J DS I = - 250 A mV/C D V /T V Temperature Coefficient 4 GS(th) J GS(th) V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 60 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 60 V, V = 0 V, T = 70 C - 10 DS GS J a I V - 5 V, V = - 10 V On-State Drain Current - 8 A D(on) DS GS V = - 10 V, I = - 2.2 A 0.180 0.216 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 1.9 A 0.240 0.288 GS D a Forward Transconductance g V = - 15 V, I = - 2.2 A 4S fs DS D b Dynamic C Input Capacitance 350 iss Output Capacitance C V = - 30 V, V = 0 V, f = 1 MHz 40 pF oss DS GS C Reverse Transfer Capacitance 30 rss V = - 30 V, V = - 10 V, I = - 2.2 A 7.7 12 DS GS D Total Gate Charge Q g 4.4 6.6 nC Q Gate-Source Charge 1.3 gs V = - 30 V, V = - 4.5 V, I = - 2.2 A DS GS D Gate-Drain Charge Q 2.5 gd R Gate Resistance f = 1 MHz 2 10 20 g t Turn-On Delay Time 45 68 d(on) t Rise Time V = - 30 V, R = 16.7 60 90 r DD L I - 1.8 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 16 25 d(off) t Fall Time 13 20 f ns t Turn-On Delay Time 510 d(on) t Rise Time V = - 30 V, R = 16.7 12 20 r DD L I - 1.8 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 18 30 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 2.9 S C A Pulse Diode Forward Current I - 8 SM V I = - 1.8 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 28 56 ns rr Q Body Diode Reverse Recovery Charge 35 70 nC rr I = - 1.8 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 23 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69954 2 S09-0765-Rev. B, 04-May-09