Si3460BDV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.027 at V = 4.5 V 8 TrenchFET Power MOSFET GS Compliant to RoHS Directive 2002/95/EC 0.032 at V = 2.5 V 20 8 9 nC GS 0.040 at V = 1.8 V 8 GS APPLICATIONS Load Switch for Portable Applications Load Switch for Low Voltage Bus TSOP-6 Top View D D 1 6 D (1, 2, 5, 6) 3 mm D D 5 2 Marking Code AF XXX G S 3 4 Lot Traceability G and Date Code (3) Part Code 2.85 mm (4) S Ordering Information: Si3460BDV-T1-E3 (Lead (Pb)-free) Si3460BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS a T = 25 C 8 C T = 70 C 7.1 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 6.7 A b, c T = 70 C 5.4 A A Pulsed Drain Current I 20 DM T = 25 C 2.9 C Continuous Source-Drain Diode Current I S b, c T = 25 C 1.7 A T = 25 C 3.5 C T = 70 C 2.2 C Maximum Power Dissipation P W D b, c T = 25 C 2 A b, c T = 70 C 1.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 50 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 30 36 thJF Notes: a. Package limited b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 C/W. Document Number: 74412 www.vishay.com S09-1498-Rev. C, 10-Aug-09 1Si3460BDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V /T V Temperature Coefficient 22.5 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 2.9 GS(th) J GS(th) V V = V , I = 250 A V Gate-Source Threshold Voltage 0.45 1.0 GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 ns GSS DS GS V = 20 V, V = 0 V 1 DS GS I A DSS Zero Gate Voltage Drain Current V = 20 V, V = 0 V, T = 70 C 10 DS GS J a I V 5 V, V = 4.5 V A On-State Drain Current 20 D(on) DS GS V = 4.5 V, I = 5.1 A 0.023 0.027 GS D a R V = 2.5 V, I = 4.7 A Drain-Source On-State Resistance 0.027 0.032 DS(on) GS D V = 1.8 V, I = 2.5 A 0.033 0.040 GS D a g V = 10 V, I = 5.1 A Forward Transconductance 22 S fs DS D b Dynamic Input Capacitance C 860 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 110 pF oss DS GS Reverse Transfer Capacitance C 65 rss V = 10 V, V = 8 V, I = 8 A 16 24 DS GS D Q Total Gate Charge g 9 13.5 nC Gate-Source Charge Q 1.4 V = 10 V, V = 4.5 V, I = 8 A gs DS GS D Q Gate-Drain Charge 1.4 gd R f = 1 MHz Gate Resistance 3.2 g t Turn-On Delay Time 715 d(on) V = 10 V, R = 1.9 t Rise Time DD L 60 90 r I 5.4 A, V = 4.5 V, R = 1 D GEN g t Turn-Off Delay Time 25 40 d(off) t Fall Time 610 f ns t Turn-On Delay Time 510 d(on) V = 10 V, R = 1.9 t Rise Time DD L 15 25 r I 5.4 A, V = 8 V, R = 1 D GEN g Turn-Off Delay Time t 25 40 d(off) t Fall Time 510 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 8 S C A I Pulse Diode Forward Current 20 SM Body Diode Voltage V I = 5.4 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 40 ns rr Body Diode Reverse Recovery Charge Q 920 nC rr I = 5.4 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns t Reverse Recovery Rise Time 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74412 2 S09-1498-Rev. C, 10-Aug-09