New Product Si4114DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition e 0.006 at V = 10 V TrenchFET Power MOSFET GS 20 20 27.5 nC 100 % R and UIS Tested e g 0.007 at V = 4.5 V GS 20 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Low-Side MOSFET for Synchronous Buck SO-8 - Game Machine - PC D SD 1 8 SD 2 7 SD 3 6 GD 4 5 G Top View S Ordering Information: Si4114DY-T1-E3 (Lead (Pb)-free) Si4114DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V 20 Drain-Source Voltage DS V V 16 Gate-Source Voltage GS e T = 25 C C 20 T = 70 C 18.2 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 15.2 b, c T = 70 C A 12.1 A Pulsed Drain Current I 50 DM T = 25 C 5.1 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.2 Single Pulse Avalanche Current I 30 AS L = 0.1 mH E 45 mJ Avalanche Energy AS T = 25 C 5.7 C T = 70 C 3.6 C P Maximum Power Dissipation W D b, c T = 25 C A 2.5 b, c T = 70 C A 1.6 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R Maximum Junction-to-Ambient 39 50 thJA C/W R 18 22 Maximum Junction-to-Foot (Drain) Steady State thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. e. Package limited. Document Number: 68394 www.vishay.com S09-0764-Rev. B, 04-May-09 1New Product Si4114DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 19 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.3 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.1 V GS(th) DS GS D I V = 0 V, V = 16 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.0049 0.006 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7 A 0.0056 0.007 GS D a g V = 10 V, I = 10 A 55 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3700 iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz 745 pF oss DS GS C Reverse Transfer Capacitance 315 rss V = 10 V, V = 10 V, I = 10 A 62 95 DS GS D Q Total Gate Charge g 27.5 42 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 10 A 8.0 gs DS GS D Q Gate-Drain Charge 6.0 gd R Gate Resistance f = 1 MHz 0.15 0.7 1.4 g t Turn-On Delay Time 30 55 d(on) t Rise Time V = 10 V, R = 2 13 25 r DD L I 5 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 60 100 d(off) Fall Time t 30 55 f ns t Turn-On Delay Time 13 25 d(on) Rise Time t 918 V = 10 V, R = 2 r DD L I 5 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 38 65 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 5.1 S C A a I 50 Pulse Diode Forward Current SM Body Diode Voltage V I = 2 A 0.71 1.1 V SD S t Body Diode Reverse Recovery Time 26 50 ns rr Body Diode Reverse Recovery Charge Q 16 30 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns Reverse Recovery Rise Time t 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68394 2 S09-0764-Rev. B, 04-May-09