X-On Electronics has gained recognition as a prominent supplier of SI4401DDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4401DDY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4401DDY-T1-GE3 Vishay

SI4401DDY-T1-GE3 electronic component of Vishay
SI4401DDY-T1-GE3 Vishay
SI4401DDY-T1-GE3 MOSFETs
SI4401DDY-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI4401DDY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 40 V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SOIC
Datasheet: SI4401DDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7457 ea
Line Total: USD 0.75 
Availability - 2160
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2
Multiples : 1
2 : USD 0.4429

12125
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.3312
5000 : USD 0.3312
7500 : USD 0.325
10000 : USD 0.325
12500 : USD 0.3187

2160
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7457
10 : USD 0.5854
30 : USD 0.5173
100 : USD 0.3336
500 : USD 0.3054
1000 : USD 0.2868

13062
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.1087
10 : USD 0.6988
100 : USD 0.495
500 : USD 0.396
1000 : USD 0.3663
2500 : USD 0.3146
5000 : USD 0.3047
10000 : USD 0.3025
25000 : USD 0.2948

2009
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.994
10 : USD 0.777
44 : USD 0.4018
119 : USD 0.3808
500 : USD 0.3794

9700
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.8894

67900
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.5449
35000 : USD 0.4979
52500 : USD 0.4632
70000 : USD 0.4369

2425
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.3364
5000 : USD 0.3329
10000 : USD 0.3174

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the SI4401DDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4401DDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The VISHAY SI4401DDY-T1-GE3 is an 8-lead P-Channel metal oxide semiconductor field effect transistor (MOSFET) used in a variety of switching applications. This transistor is a type of power semiconductor, allowing high current to be switched on and off quickly and efficiently. The maximum drain source voltage (VDS) is 40V and maximum continuous drain current (ID) is 16A while in the P-channel configuration. It has a maximum drain-source on-resistance of 7.9 mW, a fast switching speed, low gate charge and an improved figure of merit. It also offers an improved immunity to latch-up, protection against body-diode dV/dt, built-in ESD protection and a wide temperature range of -55°C to 150°C. This MOSFET is manufactured in a 8-lead SOIC surface mount package allowing for a higher power density and improved thermal and electrical performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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