X-On Electronics has gained recognition as a prominent supplier of SI4401DDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4401DDY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4401DDY-T1-GE3 Vishay

SI4401DDY-T1-GE3 electronic component of Vishay
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Part No.SI4401DDY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 40 V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SOIC
Datasheet: SI4401DDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7898 ea
Line Total: USD 0.79 
Availability - 16340
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
32
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6231
10 : USD 0.5535
25 : USD 0.3839

4850
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.325
5000 : USD 0.325
7500 : USD 0.325
10000 : USD 0.325
12500 : USD 0.325

2257
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5625
10 : USD 0.4591
30 : USD 0.4063
100 : USD 0.3556
500 : USD 0.3256
1000 : USD 0.3086

16340
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7898
10 : USD 0.5995
100 : USD 0.495
500 : USD 0.396
1000 : USD 0.3663
2500 : USD 0.3146
5000 : USD 0.308
10000 : USD 0.3025
25000 : USD 0.2948

2121
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.994
10 : USD 0.7756
43 : USD 0.3976
116 : USD 0.3766
7500 : USD 0.364

2425
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.4164

67900
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.5556
35000 : USD 0.5077
52500 : USD 0.4723
70000 : USD 0.4455

2425
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.3617
25000 : USD 0.3259

32
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 20
Multiples : 1
20 : USD 0.5535
25 : USD 0.3839

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the SI4401DDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4401DDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The VISHAY SI4401DDY-T1-GE3 is an 8-lead P-Channel metal oxide semiconductor field effect transistor (MOSFET) used in a variety of switching applications. This transistor is a type of power semiconductor, allowing high current to be switched on and off quickly and efficiently. The maximum drain source voltage (VDS) is 40V and maximum continuous drain current (ID) is 16A while in the P-channel configuration. It has a maximum drain-source on-resistance of 7.9 mW, a fast switching speed, low gate charge and an improved figure of merit. It also offers an improved immunity to latch-up, protection against body-diode dV/dt, built-in ESD protection and a wide temperature range of -55°C to 150°C. This MOSFET is manufactured in a 8-lead SOIC surface mount package allowing for a higher power density and improved thermal and electrical performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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