SI4401DDY-T1-GE3 Vishay

The VISHAY SI4401DDY-T1-GE3 is an 8-lead P-Channel metal oxide semiconductor field effect transistor (MOSFET) used in a variety of switching applications. This transistor is a type of power semiconductor, allowing high current to be switched on and off quickly and efficiently. The maximum drain source voltage (VDS) is 40V and maximum continuous drain current (ID) is 16A while in the P-channel configuration. It has a maximum drain-source on-resistance of 7.9 mW, a fast switching speed, low gate charge and an improved figure of merit. It also offers an improved immunity to latch-up, protection against body-diode dV/dt, built-in ESD protection and a wide temperature range of -55°C to 150°C. This MOSFET is manufactured in a 8-lead SOIC surface mount package allowing for a higher power density and improved thermal and electrical performance.