New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.0155 at V = - 4.5 V - 13.4 GS TrenchFET Power MOSFET - 20 0.0195 at V = - 2.5 V - 12 36.5 nC GS 100 % R Tested g 0.0250 at V = - 1.8 V - 10.5 100 % UIS Tested GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Adaptor Switch High Current Load Switch SO-8 S Notebook S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4403CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8 GS T = 25 C - 13.4 C T = 70 C - 10.7 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 9.4 A a, b T = 70 C - 7.5 A A Pulsed Drain Current I - 40 DM T = 25 C - 4.1 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 2.1 A Avalanche Current I - 15 AS L = 0.1 mH Single-Pulse Avalanche Energy E 11.25 mJ AS T = 25 C 5 C T = 70 C 3.2 C Maximum Power Dissipation P W D a, b T = 25 C 2.5 A a, b T = 70 C 1.6 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c Maximum Junction-to-Ambient t 10 s R 38 50 thJA C/W Maximum Junction-to-Foot Steady State R 20 25 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 85 C/W. d. Based on T = 25 C. C Document Number: 67341 www.vishay.com S11-0243-Rev. A, 14-Feb-11 1New Product Si4403CDY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 14.5 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.8 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.4 - 1.0 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 70 C - 10 DS GS J a On-State Drain Current I V - 10 V, V = - 5 V - 20 A D(on) DS GS V = - 4.5 V, I = - 9 A 0.0125 0.0155 GS D a Drain-Source On-State Resistance R V = - 2.5 V, I = - 6 A 0.0155 0.0195 DS(on) GS D V = - 1.8 V, I = - 3 A 0.0195 0.0250 GS D a Forward Transconductance g V = - 10 V, I = - 9 A 40 S fs DS D b Dynamic Input Capacitance C 2380 iss Output Capacitance C 340V = - 10 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 280 rss V = - 10 V, V = - 8 V, I = - 5 A 60 90 DS GS D Total Gate Charge Q g 36.5 55 nC Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 5 A 3.1 gs DS GS D Gate-Drain Charge Q 9.9 gd Gate Resistance R f = 1 MHz 1.0 4.8 9.6 g Turn-On Delay Time t 714 d(on) Rise Time t 918 V = - 10 V, R = 2 r DD L I - 5 A, V = - 8 V, R = 1 Turn-Off DelayTime t 108200 D GEN g d(off) Fall Time t 41 80 f ns Turn-On Delay Time t 14 28 d(on) Rise Time t 16 32 V = - 10 V, R = 2 r DD L I - 5 A, V = - 4.5 V, R = 1 Turn-Off DelayTime t 101200 D GEN g d(off) Fall Time t 40 80 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 4.1 S C A Pulse Diode Forward Current I - 40 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.66 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 81 150 ns rr Body Diode Reverse Recovery Charge Q 150 300 nC rr I = - 2.3 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 43 a ns Reverse Recovery Rise Time t 38 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67341 2 S11-0243-Rev. A, 14-Feb-11