Si4288DY Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) DS DS(on) I (A) g D Definition 0.020 at V = 10 V 9.2 GS TrenchFET Power MOSFET 40 4.9 0.023 at V = 4.5 V 8.6 GS 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS CCFL Inverter DC/DC Converter D D 1 2 HDD SO-8 S D 1 8 1 1 G D 1 2 7 1 G G S D 1 2 3 6 2 2 G D 2 4 5 2 Top View S S 1 2 Ordering Information: Si4288DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS T = 25 C 9.2 C T = 70 C 7.4 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 7.4 b, c T = 70 C A 5.9 Pulsed Drain Current (10 s Pulse Width) I 50 DM A T = 25 C 2.6 C I Source-Drain Current Diode Current S b, c T = 25 C A 1.6 Pulsed Source-Drain Current I 50 SM Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5 AS T = 25 C 3.1 C T = 70 C 2 C P Maximum Power Dissipation W D b, c T = 25 C A 2 b, c T = 70 C 1.28 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit b, d t 10 s R 49 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady-State R 30 40 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 C/W. Document Number: 67078 www.vishay.com S10-2768-Rev. A, 29-Nov-10 1Si4288DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V Temperature Coefficient V /T 49 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.2 GS(th) GS(th) J V V = V , I = 250 A Gate Threshold Voltage 1.2 2.5 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J b I V = 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.0165 0.0200 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7 A 0.019 0.023 GS D b g V = 15 V, I = 10 A 35 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 580 iss C V = 20 V, V = 0 V, I = 1 MHz Output Capacitance 100 pF oss DS GS D Reverse Transfer Capacitance C 42 rss V = 20 V, V = 10 V, I = 10 A 10 15 DS GS D Q Total Gate Charge g 4.9 7.4 nC Q V = 20 V, V = 4.5 V, I = 10 A Gate-Source Charge 1.5 gs DS GS D Q Gate-Drain Charge 1.5 gd Gate Resistance R f = 1 MHz 0.6 2.7 5.4 g t Turn-On Delay Time 714 d(on) t Rise Time V = 20 V, R = 2 918 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 16 32 d(off) t Fall Time 816 f ns Turn-On Delay Time t 12 24 d(on) t Rise Time V = 20 V, R = 2 10 20 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 13 26 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 2.6 S C A a I 50 Pulse Diode Forward Current SM V I = 3 A Body Diode Voltage 0.77 1.2 V SD S Body Diode Reverse Recovery Time t 15 30 ns rr Q Body Diode Reverse Recovery Charge 7.5 15 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 9 a ns t Reverse Recovery Rise Time 6 b Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67078 2 S10-2768-Rev. A, 29-Nov-10