Si4346DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available 0.023 at V = 10 V 8 GS TrenchFET Gen II Power MOSFET 0.025 at V = 4.5 V 7.5 GS 100 % R Tested 30 6.5 g 0.030 at V = 3.0 V 6.8 GS 0.036 at V = 2.5 V 6.0 APPLICATIONS GS High-Side DC/DC Conversion - Notebook - Desktop - Server Notebook Logic DC/DC, Low-Side SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information: Si4346DY-T1-E3 (Lead (Pb)-free) Si4346DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 12 GS T = 25 C 85.9 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 6.5 4.7 A A I Pulsed Drain Current 30 DM a I 2.2 1.20 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.31 A a P W Maximum Power Dissipation D T = 70 C 1.6 0.84 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 43 50 a R Maximum Junction-to-Ambient thJA Steady State 74 95 C/W Maximum Junction-to-Foot (Drain) Steady State R 22 27 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72958 www.vishay.com S09-0392-Rev. E, 09-Mar-09 1Si4346DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.7 2.0 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 8 A 0.019 0.023 GS D V = 4.5 V, I = 7.5 A 0.021 0.025 GS D a R Drain-Source On-State Resistance DS(on) V = 3.0 V, I = 6.8 A 0.023 0.030 GS D V = 2.5 V, I = 6.0 A 0.027 0.036 GS D a g V = 15 V, I = 8 A 32 S Forward Transconductance fs DS D a V I = 2.2 A, V = 0 V 0.75 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 6.5 10 g Q V = 15 V, V = 4.5 V, I = 8 A Gate-Source Charge 2.3 nC gs DS GS D Gate-Drain Charge Q 1.1 gd R Gate Resistance 0.25 0.5 0.75 g Turn-On Delay Time t 915 d(on) t Rise Time V = 15 V, R = 15 11 17 r DD L 1 A, V = 10 V, R = 6 I Turn-Off Delay Time t 40 60 ns d(off) D GEN g t Fall Time 711 f t I = 2.2 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 20 35 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 30 V = 10 thru 3 V GS 25 25 20 20 15 15 10 10 T = 125 C 2 V C 5 5 25 C - 55 C 0 0 012345 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72958 2 S09-0392-Rev. E, 09-Mar-09 I - Drain Current (A) D I - Drain Current (A) D