New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, e V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.018 at V = 10 V 8 GS TrenchFET Power MOSFET 25 0.020 at V = 4.5 V 8 7.8 nC GS 100 % R and UIS Tested g 0.024 at V = 2.5 V 7.5 Compliant to RoHS Directive 2002/95/EC GS APPLICATIONS SO-8 Synchronous Buck Converter DC/DC Converter S D 1 1 8 1 D D 1 2 G D 1 2 7 1 S D 2 3 6 2 G D 4 5 2 2 G G 1 2 Top View S S 1 2 Ordering Information: Si4228DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 25 DS V V Gate-Source Voltage 12 GS e T = 25 C 8 C e T = 70 C 8 C Continuous Drain Current (T = 150 C) I J D b, c, e T = 25 C 8 A b, c T = 70 C 6.9 A A I Pulsed Drain Current 50 DM T = 25 C 2.6 C Continuous Source-Drain Diode Current I b, c S T = 25 C 1.7 A I Single Pulse Avalanche Current 15 AS L = 0.1 mH Avalanche Energy E 11.25 mJ AS T = 25 C 3.1 C T = 70 C 2 C Maximum Power Dissipation P W D b, c T = 25 C 2 A b, c T = 70 C 1.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 10 s 52 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State thJF 30 40 Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 C/W. e. Package limited. Document Number: 66591 www.vishay.com S10-1043-Rev. A, 03-May-10 1New Product Si4228DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 25 V DS GS D V Temperature Coefficient V /T 20 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.6 1.4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 25 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V = 10 V, I = 7 A 0.015 0.018 GS D a Drain-Source On-State Resistance R V = 4.5 V, I = 7 A 0.016 0.020 DS(on) GS D V = 2.5 V, I = 5 A 0.020 0.024 GS D a Forward Transconductance g V = 15 V, I = 7 A 68 S fs DS D b Dynamic Input Capacitance C 790 iss Output Capacitance C 146V = 12.5 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 76 rss V = 12.5 V, V = 10 V, I = 8.6 A 16.5 25 DS GS D Total Gate Charge Q g 7.8 12 nC Gate-Source Charge Q 1.6V = 12.5 V, V = 4.5 V, I = 8.6 A gs DS GS D Gate-Drain Charge Q 1.7 gd Gate Resistance R f = 1 MHz 0.5 2.5 5 g Turn-On Delay Time t 714 d(on) Rise Time t 1218 r V = 12.5 V, R = 1.8 DD L I 6.9 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 2130 D GEN g d(off) Fall Time t 10 20 f ns Turn-On Delay Time t 48 d(on) Rise Time t 918 r V = 12.5 V, R = 1.8 DD L I 6.9 A, V = 10 V, R = 1 Turn-Off Delay Time t 20D GEN g 30 d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 2.6 S C A a Pulse Diode Forward Current I 50 SM Body Diode Voltage V I = 6.9 A 0.82 1.2 V SD S 15 23 ns Body Diode Reverse Recovery Time t rr Body Diode Reverse Recovery Charge Q 612 nC rr I = 6.9 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 8 a ns Reverse Recovery Rise Time t 7 b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66591 2 S10-1043-Rev. A, 03-May-10