Si4286DY Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.0325 at V = 10 V 7 GS TrenchFET Gen III Power MOSFET 40 3.3 nC 0.040 at V = 4.5 V 6.3 GS 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter SO-8 - External HDD - Notebook System Power D D 1 2 S D 1 8 1 1 LCD Display Backlighting D G 2 7 1 1 D S 3 6 2 2 G D 2 4 5 2 G G 1 2 Top View S S 1 2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si4286DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS T = 25 C 7 C T = 70 C 5.6 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 5.7 A b, c T = 70 C 4.6 A A Pulsed Drain Current (t = 300 s) I 20 DM T = 25 C 2.4 C Continuous Source-Drain Diode Current I S b, c T = 25 C 1.6 A Single Pulse Avalanche Current I 8 AS L = 0.1 mH Single Pulse Avalanche Energy E 3.2 mJ AS T = 25 C 2.9 C T = 70 C 1.86 C Maximum Power Dissipation P W D b, c T = 25 C 1.9 A b, c T = 70 C 1.23 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 55 65 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 35 43 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 C/W. Document Number: 67599 www.vishay.com S11-1151-Rev. A, 13-Jun-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4286DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 40 V DS GS D V Temperature Coefficient V /T 51 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 10 A D(on) DS GS V 10 V, I = 8 A 0.027 0.0325 GS D a Drain-Source On-State Resistance R DS(on) V 4.5 V, I = 5 A 0.033 0.040 GS D a Forward Transconductance g V = 10 V, I = 8 A 27 S fs DS D b Dynamic Input Capacitance C 375 iss Output Capacitance C 67V = 20 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 29 rss V = 20 V, V = 10 V, I = 8 A6.8 10.5 DS GS D Total Gate Charge Q g 3.3 5 nC Gate-Source Charge Q 1V = 20 V, V = 4.5 V, I = 8 A gs DS GS D Gate-Drain Charge Q 1.1 gd Gate Resistance R f = 1 MHz 0.8 3.7 7.4 g Turn-On Delay Time t 33 60 d(on) Rise Time t 60110 r V = 20 V, R = 2.5 DD L I 8 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 17D GEN g 34 d(off) Fall Time t 22 40 f ns Turn-On Delay Time t 918 d(on) Rise Time t 1122 V = 20 V, R = 2.5 r DD L I 8 A, V = 10 V, R = 1 Turn-Off Delay Time t 10D GEN g 20 d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 2.4 S C A Pulse Diode Forward Current I 20 SM Body Diode Voltage V I = 3 A, V = 0 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 13 26 ns rr Body Diode Reverse Recovery Charge Q 612 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 7 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67599 2 S11-1151-Rev. A, 13-Jun-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000