Si4202DY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.014 at V = 10 V 12.1 GS TrenchFET Power MOSFET 30 5.4 nC 0.017 at V = 4.5 V 11 GS 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Buck SO-8 D D - Notebooks 1 2 - Servers S D 1 1 8 1 - STB G D 1 2 7 1 S D 2 3 6 2 G G 1 2 G D 2 4 5 2 Top View S S 1 2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si4202DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 12.1 C T = 70 C 11 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 9.7 a, b T = 70 C A 8.2 A I Pulsed Drain Current 50 DM T = 25 C 3.1 C Continuous Source Drain Diode Current I S a, b T = 25 C A 2 I Avalanche Current 15 AS L = 0 1 mH Single-Pulse Avalanche Energy E 11.25 mJ AS T = 25 C 3.7 C T = 70 C 2.6 C P Maximum Power Dissipation W D a, b T = 25 C A 2.4 a, b T = 70 C 1.7 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c R t 10 s 50 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 33 41 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 110 C/W. Document Number: 67092 www.vishay.com S10-2602-Rev. A, 15-Nov-10 1Si4202DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 33 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 8 A 0.0115 0.0140 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5 A 0.0138 0.0170 GS D a g V = 15 V, I = 8 A 33 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 710 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 146 pF oss DS GS C Reverse Transfer Capacitance 63 rss V = 15 V, V = 10 V, I = 8 A 11.2 17 DS GS D Total Gate Charge Q g 5.4 8 nC Q V = 15 V, V = 4.5 V, I = 8 A Gate-Source Charge 1.6 gs DS GS D Gate-Drain Charge Q 1.6 gd R Gate Resistance f = 1 MHz 0.5 2.5 5 g t Turn-On Delay Time 11 22 d(on) t Rise Time 18 35 r V = 15 V, R = 3 DD L I 5 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 14 28 d(off) Fall Time t 816 f ns t Turn-On Delay Time 816 d(on) t Rise Time V = 15 V, R = 3 918 r DD L I 5 A, V = 10 V, R = 1 Turn-Off Delay Time t D GEN g 17 34 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 3.1 S C A a I 50 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.75 1.2 V SD S t Body Diode Reverse Recovery Time 13 26 ns rr Body Diode Reverse Recovery Charge Q 5.5 11 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67092 2 S10-2602-Rev. A, 15-Nov-10