Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Q (Typ.) I (A) DS DS(on) g D 100 % R Tested g 0.0195 at V = 10 V 8.5 GS 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.023 at V = 4.5 V 8.6 GS APPLICATIONS Notebook System Power Low Current DC/DC D D SO-8 1 2 S D 1 8 1 1 G D 1 2 7 1 S D 3 6 2 2 G G 1 2 G D 2 4 5 2 Top View S S 1 2 Ordering Information: Si4214DDY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 8.5 C T = 70 C 7.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 7.5 b, c T = 70 C A 5.9 Pulsed Drain Current I 30 DM A T = 25 C 2.8 C Source-Drain Current Diode Current I S b, c T = 25 C A 1.8 Pulsed Source-Drain Current I 30 SM Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5 AS T = 25 C 3.1 C T = 70 C 2.0 C Maximum Power Dissipation P W D b, c T = 25 C A 2.0 b, c T = 70 C A 1.25 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit b, d R t 10 s 52 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady-State 30 40 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 C/W. Document Number: 67907 www.vishay.com S11-0653-Rev. A, 11-Apr-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4214DDY-T1-E3 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T I = 250 A 3.0 DS DS J D mV/C V Temperature Coefficient V /T I = 250 A - 5.2 GS(th) GS(th) J D V V = V , I = 250 A Gate Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, TJ = 55 C 10 DS GS b I V = 5 V, V = 10 V 20 A On -State Drain Current D(on) DS GS V = 10 V, I = 8 A 0.016 0.0195 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5 A 0.019 0.023 GS D b g V = 15 V, I = 8 A 27 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 660 iss Output Capacitance C V = 15 V, V = 0 V, I = 1 MHz 140 pF oss DS GS D C Reverse Transfer Capacitance 86 rss V = 15 V, V = 10 V, I = 8 A 14.5 22 DS GS D Q Total Gate Charge g 7.1 11 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 8 A 1.9 gs DS GS D Q Gate-Drain Charge 2.7 gd R Gate Resistance f = 1 MHz 0.5 2.6 5.2 g t Turn-On Delay Time 14 28 d(on) t Rise Time V = 15 V, R = 3 45 80 r DD L I 5 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 18 35 d(off) Fall Time t 12 24 f ns t Turn-On Delay Time 714 d(on) Rise Time t 10 20 V = 15 V, R = 3 r DD L I 5 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 15 30 d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.8 S C A a I 30 Pulse Diode Forward Current SM Body Diode Voltage V I = 2 A 0.77 1.1 V SD S t Body Diode Reverse Recovery Time 17 34 ns rr Body Diode Reverse Recovery Charge Q 918 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a nS Reverse Recovery Rise Time t 7 b Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67907 2 S11-0653-Rev. A, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000