X-On Electronics has gained recognition as a prominent supplier of SI4214DDY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4214DDY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4214DDY-T1-E3 Vishay

SI4214DDY-T1-E3 electronic component of Vishay
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Part No.SI4214DDY-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds 20V Vgs SO-8
Datasheet: SI4214DDY-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.3895 ea
Line Total: USD 973.75 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3895
10000 : USD 0.3368
25000 : USD 0.3297

0
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 2.7857
10 : USD 1.0249
100 : USD 0.7544
500 : USD 0.5961
1000 : USD 0.4769
2500 : USD 0.4312
5000 : USD 0.419

   
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We are delighted to provide the SI4214DDY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4214DDY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Q (Typ.) I (A) DS DS(on) g D 100 % R Tested g 0.0195 at V = 10 V 8.5 GS 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.023 at V = 4.5 V 8.6 GS APPLICATIONS Notebook System Power Low Current DC/DC D D SO-8 1 2 S D 1 8 1 1 G D 1 2 7 1 S D 3 6 2 2 G G 1 2 G D 2 4 5 2 Top View S S 1 2 Ordering Information: Si4214DDY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 8.5 C T = 70 C 7.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 7.5 b, c T = 70 C A 5.9 Pulsed Drain Current I 30 DM A T = 25 C 2.8 C Source-Drain Current Diode Current I S b, c T = 25 C A 1.8 Pulsed Source-Drain Current I 30 SM Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5 AS T = 25 C 3.1 C T = 70 C 2.0 C Maximum Power Dissipation P W D b, c T = 25 C A 2.0 b, c T = 70 C A 1.25 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit b, d R t 10 s 52 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady-State 30 40 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 C/W. Document Number: 67907 www.vishay.com S11-0653-Rev. A, 11-Apr-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4214DDY-T1-E3 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T I = 250 A 3.0 DS DS J D mV/C V Temperature Coefficient V /T I = 250 A - 5.2 GS(th) GS(th) J D V V = V , I = 250 A Gate Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, TJ = 55 C 10 DS GS b I V = 5 V, V = 10 V 20 A On -State Drain Current D(on) DS GS V = 10 V, I = 8 A 0.016 0.0195 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5 A 0.019 0.023 GS D b g V = 15 V, I = 8 A 27 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 660 iss Output Capacitance C V = 15 V, V = 0 V, I = 1 MHz 140 pF oss DS GS D C Reverse Transfer Capacitance 86 rss V = 15 V, V = 10 V, I = 8 A 14.5 22 DS GS D Q Total Gate Charge g 7.1 11 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 8 A 1.9 gs DS GS D Q Gate-Drain Charge 2.7 gd R Gate Resistance f = 1 MHz 0.5 2.6 5.2 g t Turn-On Delay Time 14 28 d(on) t Rise Time V = 15 V, R = 3 45 80 r DD L I 5 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 18 35 d(off) Fall Time t 12 24 f ns t Turn-On Delay Time 714 d(on) Rise Time t 10 20 V = 15 V, R = 3 r DD L I 5 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 15 30 d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.8 S C A a I 30 Pulse Diode Forward Current SM Body Diode Voltage V I = 2 A 0.77 1.1 V SD S t Body Diode Reverse Recovery Time 17 34 ns rr Body Diode Reverse Recovery Charge Q 918 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a nS Reverse Recovery Rise Time t 7 b Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67907 2 S11-0653-Rev. A, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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