X-On Electronics has gained recognition as a prominent supplier of IPG20N06S2L35AATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPG20N06S2L35AATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPG20N06S2L35AATMA1 Infineon

IPG20N06S2L35AATMA1 electronic component of Infineon
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Part No.IPG20N06S2L35AATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFET
Datasheet: IPG20N06S2L35AATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
744: USD 0.4113 ea
Line Total: USD 306.01 
Availability - 0
MOQ: 744  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 5000
Multiples : 5000
5000 : USD 0.6237

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 744
Multiples : 1
744 : USD 0.4113

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 3.8168
10 : USD 1.427
100 : USD 1.0771
500 : USD 0.8826
1000 : USD 0.7738
5000 : USD 0.7728

   
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We are delighted to provide the IPG20N06S2L35AATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPG20N06S2L35AATMA1 and other electronic components in the MOSFETs category and beyond.

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IPG20N06S2L-35A OptiMOS Power-Transistor Product Summary V 55 V DS 4) R 35 m DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type Package Marking IPG20N06S2L-35A PG-TDSON-8-10 2N06L35 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current 1) I T =25 C, V =10 V 20 A D 2) C GS one channel active T =100 C, V =10 V 20 C GS 2) Pulsed drain current I - 80 D,pulse one channel active 2, 4) E I =10A 100 mJ Avalanche energy, single pulse AS D 4) I - 15 A Avalanche current, single pulse AS V Gate source voltage -20V GS Power dissipation P T =25 C 65 W tot C one channel active Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2013-02-28 IPG20N06S2L-35A Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R---2.3K/W thJC SMD version, device on PCB R minimal footprint - 100 - thJA 2 3) -60 - 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I = 1 mA 55 - - V (BR)DSS GS D V V =V , I =27 A Gate threshold voltage 1.2 1.6 2.0 GS(th) DS GS D V =55 V, V =0 V, DS GS 4) I -0.01 1 A Zero gate voltage drain current DSS T =25 C j V =55 V, V =0 V, DS GS - 1 100 2) T =125 C j 4) I V =20 V, V =0 V - 1 100 nA Gate-source leakage current GSS GS DS 4) R V =4.5 V, I =10A -35 44 m Drain-source on-state resistance DS(on) GS D V =10 V, I =15A -28 35 GS D Rev. 1.0 page 2 2013-02-28

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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