Si4384DY Vishay Siliconix N-Channel Reduced Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.0085 at V = 10 V 15 GS TrenchFET Gen II Power MOSFETs 30 0.0125 at V = 4.5 V 12 GS PWM Optimized 100 % R Tested g APPLICATIONS High-Side DC/DC Conversion - Notebook SO-8 - Desktop - Server D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information: Si4384DY-T1-E3 (Lead (Pb)-free) Si4384DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 15 10 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 12 8 A I Pulsed Drain Current 50 A DM a I 2.8 1.3 Continuous Source Current (Diode Conduction) S Single Pulse Avalanche Current I 25 AS L = 0.1 mH E Avalanche Energy 31 mJ AS T = 25 C 3.1 1.47 A a P W Maximum Power Dissipation D T = 70 C 20.95 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 34 40 a R Maximum Junction-to-Ambient (MOSFET) thJA Steady State 71 85 C/W R Maximum Junction-to-Foot (Drain) Steady State 17 20 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72645 www.vishay.com S09-0226-Rev. C, 09-Feb09 1Si4384DY Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 70 C 10 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.007 0.0085 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 12 A 0.0105 0.0125 GS D a g V = 15 V, I = 15 A 56 S Forward Transconductance fs DS D a V I = 2.8 A, V = 0 V 0.75 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 12 18 g Q V = 15 V, V = 4.5 V, I = 15 A Gate-Source Charge 5.9 nC gs DS GS D Gate-Drain Charge Q 4.0 gd R Gate Resistance 0.8 1.7 2.5 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 15 V, R = 15 13 20 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 45 70 ns D GEN g d(off) t Fall Time 13 20 f Source-Drain Reverse Recovery Time t I = 2.8 A, dI/dt = 100 A/s 25 50 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 V thru 5 V GS 40 40 4 V 30 30 20 20 T = 125 C C 10 10 25 C - 55 C 0 0 01234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72645 2 S09-0226-Rev. C, 09-Feb09 I - Drain Current (A) D I - Drain Current (A) D