X-On Electronics has gained recognition as a prominent supplier of SI4384DY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4384DY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4384DY-T1-E3 Vishay

SI4384DY-T1-E3 electronic component of Vishay
SI4384DY-T1-E3 Vishay
SI4384DY-T1-E3 MOSFETs
SI4384DY-T1-E3  Semiconductors

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See Product Specifications
Part No. SI4384DY-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
Datasheet: SI4384DY-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.6358
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MOQ : 1
Multiples : 1
1 : USD 1.5754
10 : USD 1.4015
100 : USD 1.1159
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MOQ : 2500
Multiples : 2500
2500 : USD 0.5355
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MOQ : 1
Multiples : 1
1 : USD 0.8687
25 : USD 0.8538
62 : USD 0.8064
125 : USD 0.7335
312 : USD 0.7309
625 : USD 0.6508
1250 : USD 0.58
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Obsolete
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MOQ : 2500
Multiples : 2500
2500 : USD 0.6334
N/A

Obsolete
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MOQ : 1
Multiples : 1
1 : USD 3.2635
10 : USD 1.295
100 : USD 0.9931
500 : USD 0.8522
1000 : USD 0.7308
2500 : USD 0.6966
5000 : USD 0.6966
10000 : USD 0.6844
25000 : USD 0.6637
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Obsolete
0
MOQ : 10
Multiples : 1
10 : USD 0.7586
N/A

Obsolete
   
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RoHS - XON
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
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We are delighted to provide the SI4384DY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4384DY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si4384DY Vishay Siliconix N-Channel Reduced Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.0085 at V = 10 V 15 GS TrenchFET Gen II Power MOSFETs 30 0.0125 at V = 4.5 V 12 GS PWM Optimized 100 % R Tested g APPLICATIONS High-Side DC/DC Conversion - Notebook SO-8 - Desktop - Server D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information: Si4384DY-T1-E3 (Lead (Pb)-free) Si4384DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 15 10 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 12 8 A I Pulsed Drain Current 50 A DM a I 2.8 1.3 Continuous Source Current (Diode Conduction) S Single Pulse Avalanche Current I 25 AS L = 0.1 mH E Avalanche Energy 31 mJ AS T = 25 C 3.1 1.47 A a P W Maximum Power Dissipation D T = 70 C 20.95 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 34 40 a R Maximum Junction-to-Ambient (MOSFET) thJA Steady State 71 85 C/W R Maximum Junction-to-Foot (Drain) Steady State 17 20 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72645 www.vishay.com S09-0226-Rev. C, 09-Feb09 1Si4384DY Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 70 C 10 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.007 0.0085 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 12 A 0.0105 0.0125 GS D a g V = 15 V, I = 15 A 56 S Forward Transconductance fs DS D a V I = 2.8 A, V = 0 V 0.75 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 12 18 g Q V = 15 V, V = 4.5 V, I = 15 A Gate-Source Charge 5.9 nC gs DS GS D Gate-Drain Charge Q 4.0 gd R Gate Resistance 0.8 1.7 2.5 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 15 V, R = 15 13 20 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 45 70 ns D GEN g d(off) t Fall Time 13 20 f Source-Drain Reverse Recovery Time t I = 2.8 A, dI/dt = 100 A/s 25 50 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 V thru 5 V GS 40 40 4 V 30 30 20 20 T = 125 C C 10 10 25 C - 55 C 0 0 01234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72645 2 S09-0226-Rev. C, 09-Feb09 I - Drain Current (A) D I - Drain Current (A) D

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