Si4386DY Vishay Siliconix N-Channel Reduced Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available 0.007 at V = 10 V 16 GS TrenchFET Gen II Power MOSFETs 11 30 PWM Optimized 0.0095 at V = 4.5 V 13.5 GS 100 % R Tested g APPLICATIONS DC/DC Conversion for PC SO-8 D SD 1 8 S D 2 7 SD 3 6 G D 4 5 G Top View S Ordering Information: Si4386DY-T1-E3 (Lead (Pb)-free) Si4386DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V 30 Drain-Source Voltage DS V Gate-Source Voltage V 20 GS T = 25 C 16 11 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 13 9 A Pulsed Drain Current I 50 A DM a I 2.8 1.3 Continuous Source Current (Diode Conduction) S I 20 Single Pulse Avalanche Current AS L = 0.1 mH Avalanche Energy E 20 mJ AS T = 25 C 3.1 1.47 A a P W Maximum Power Dissipation D T = 70 C 2 0.95 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 34 40 a R Maximum Junction-to-Ambient (MOSFET) thJA Steady State 71 85 C/W Maximum Junction-to-Foot (Drain) Steady State R 18 22 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 73109 www.vishay.com S09-0226-Rev. D, 09-Feb-09 1Si4386DY Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A 1.5 2.0 2.5 V Gate Threshold Voltage GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 70 C 10 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 16 A 0.0058 0.007 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 13.5 A 0.0078 0.0095 GS D a g V = 15 V, I = 16 A 51 S fs DS D Forward Transconductance a V I = 2.8 A, V = 0 V 0.75 1.1 V SD S GS Diode Forward Voltage b Dynamic Total Gate Charge Q 11 18 g Q V = 15 V, V = 4.5 V, I = 16 A 5.8 Gate-Source Charge nC gs DS GS D Gate-Drain Charge Q 3.0 gd R 0.8 1.7 2.5 Gate Resistance g Turn-On Delay Time t 12 18 d(on) t 914 Rise Time V = 15 V, R = 15 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 3553 ns D GEN g d(off) t 10 15 Fall Time f t I = 2.8 A, dI/dt = 100 A/s 25 50 Source-Drain Reverse Recovery Time rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 V thru 4 V GS 40 40 30 30 20 20 T = 125 C C 10 10 25 C 3 V - 55 C 0 0 012345 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73109 2 S09-0226-Rev. D, 09-Feb-09 I - Drain Current (A) D I - Drain Current (A) D