X-On Electronics has gained recognition as a prominent supplier of SI4204DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4204DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4204DY-T1-GE3 Vishay

SI4204DY-T1-GE3 electronic component of Vishay
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Part No.SI4204DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 19.8A DUAL N-CH MOSFET
Datasheet: SI4204DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4942 ea
Line Total: USD 1.49 
Availability - 3231
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 1  Multiples: 1
Pack Size: 1

 SI4204DY-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Quantity
1629
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3
Multiples : 1
3 : USD 1.5936
10 : USD 1.3511
25 : USD 1.3377
100 : USD 1.1564
250 : USD 1.0964
500 : USD 1.0344
1000 : USD 1.0169

2425
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.9555

3231
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 1.4942
10 : USD 1.2289
30 : USD 1.0839
100 : USD 0.9198
500 : USD 0.8473
1000 : USD 0.8148

23233
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.947
10 : USD 1.397
100 : USD 1.0868
250 : USD 0.9746
500 : USD 0.9493
1000 : USD 0.8723
2500 : USD 0.8723
5000 : USD 0.8613
10000 : USD 0.8382

1629
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 8
Multiples : 1
8 : USD 1.0169

2425
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 1.8863

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Series
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI4204DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4204DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI4204DY-T1-GE3 is a dual N-Channel MOSFET manufactured by Vishay. It has a breakdown voltage of 20V and a maximum drain current of 19.8A. The N-Channel MOSFET features a maximum on-resistance of 0.032ohm and maximum gate charge of 83nC with a 25V drive voltage. This product has an ESD rating of 10KV and it is RoHS compliant. The package size is SOT-23-(DPAK). It is designed for use in a variety of high performance applications such as audio amplifiers, power switches, and LCD backlighting.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

BC may also be referenced as

BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
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