X-On Electronics has gained recognition as a prominent supplier of SI4204DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4204DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4204DY-T1-GE3 Vishay

SI4204DY-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI4204DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 19.8A DUAL N-CH MOSFET
Datasheet: SI4204DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4942 ea
Line Total: USD 1.49 
Availability - 3279
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1637
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4937
10 : USD 1.2913
25 : USD 1.2784
100 : USD 1.1118
250 : USD 1.0895
500 : USD 1.024
1000 : USD 1.0169

2425
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.9685
5000 : USD 0.9685

3279
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4942
10 : USD 1.2289
30 : USD 1.0839
100 : USD 0.9197
500 : USD 0.8473
1000 : USD 0.8148

23502
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.6445
10 : USD 1.2535
100 : USD 1.0223
250 : USD 1.0178
500 : USD 0.9119
1000 : USD 0.9097
2500 : USD 0.8763

1637
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 8
Multiples : 1
8 : USD 1.0169

2425
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 1.1041

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Series
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI4204DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4204DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI4204DY-T1-GE3 is a dual N-Channel MOSFET manufactured by Vishay. It has a breakdown voltage of 20V and a maximum drain current of 19.8A. The N-Channel MOSFET features a maximum on-resistance of 0.032ohm and maximum gate charge of 83nC with a 25V drive voltage. This product has an ESD rating of 10KV and it is RoHS compliant. The package size is SOT-23-(DPAK). It is designed for use in a variety of high performance applications such as audio amplifiers, power switches, and LCD backlighting.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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