New Product Si4210DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.0355 at V = 10 V 6.5 TrenchFET Power MOSFET GS 30 3.7 nC 100 % UIS Tested 0.044 at V = 4.5 V 5.8 GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box Low Current DC/DC SO-8 D D 1 2 D S 1 8 1 1 D G 1 2 7 1 D S 3 6 2 2 G G 1 2 G D 4 5 2 2 Top View S 1 S 2 N-Channel MOSFET Ordering Information: Si4210DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C 6.5 C T = 70 C 5.2 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 5.2 A b, c T = 70 C 4.2 A A I Pulsed Drain Current 24 DM T = 25 C 2.25 C I Continuous Source-Drain Diode Current S b, c T = 25 C 1.48 A I 5 Single Pulse Avalanche Current AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 1.25 AS T = 25 C 2.7 C T = 70 C 1.77 C P Maximum Power Dissipation W D b, c T = 25 C 1.78 A b, c T = 70 C 1.14 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c, d t 10 s R 58 70 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 38 45 thJF Notes: a. Package limited, T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 65151 www.vishay.com S09-1821-Rev. A, 14-Sep-09 1New Product Si4210DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 32 DS DS J I = 250 A D mV/C V Temperature Coefficient V /T - 5.0 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS A V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 5 A 0.0295 0.0355 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4 A 0.036 0.044 GS D a g V = 10 V, I = 5 A 16 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 445 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 75 pF oss DS GS C Reverse Transfer Capacitance 37 rss V = 15 V, V = 10 V, I = 5 A 812 DS GS D Q Total Gate Charge g 3.7 5.6 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 5 A 1.4 gs DS GS D Q Gate-Drain Charge 1.05 gd Gate Resistance R f = 1 MHz 0.8 4.3 8.6 g t Turn-On Delay Time 12 24 d(on) Rise Time t 55 100 V = 15 V, R = 3 r DD L I 5 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 11 22 d(off) Fall Time t 816 f ns t Turn-On Delay Time 48 d(on) Rise Time t 918 V = 15 V, R = 3 r DD L I 5 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 10 20 d(off) t Fall Time 612 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.25 S C A I Pulse Diode Forward Current 24 SM V I = 2 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 11 20 ns rr Q Body Diode Reverse Recovery Charge 48 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 7 a ns t Reverse Recovery Rise Time 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65151 2 S09-1821-Rev. A, 14-Sep-09