Si4378DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.0027 at V = 4.5 V 25 GS Ultra Low On-Resistance Using High 20 0.0042 at V = 2.5 V 22 GS Density TrenchFET Gen II Power MOSFET Technology Q Optimized g 100 % R Tested g APPLICATIONS Synchronous Rectification SO-8 Point-Of-Load D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information: Si4378DY-T1-E3 (Lead (Pb)-free) Si4378DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 20 DS V V Gate-Source Voltage 12 GS T = 25 C 25 19 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 20 13 A Pulsed Drain Current (10 s Pulse Width) I 70 A DM a I 2.9 1.3 Continuous Source Current (Diode Conduction) S I Avalanche Current L = 0.1 mH 40 AS T = 25 C 3.5 1.6 A a P W Maximum Power Dissipation D T = 70 C 2.2 1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 29 35 a R Maximum Junction-to-Ambient thJA Steady State 67 80 C/W Maximum Junction-to-Foot (Drain) Steady State R 13 16 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72918 www.vishay.com S09-0226-Rev. C, 09-Feb-09 1Si4378DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 1.8 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 4.5 V 30 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 25 A 0.0022 0.0027 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 22 A 0.0034 0.0042 GS D a g V = 10 V, I = 25 A 150 S Forward Transconductance fs DS D a V I = 2.9 A, V = 0 V 0.72 1.1 V Diode Forward Voltage SD S GS b Dynamic Input Capacitance C 8500 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 1250 pF oss DS GS Reverse Transfer Capacitance C 650 rss Q Total Gate Charge 55 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 25 A 16 nC gs DS GS D Q Gate-Drain Charge 10 gd Gate Resistance R 0.8 1.3 2.0 g t Turn-On Delay Time 85 130 d(on) Rise Time t 65 100 r V = 10 V, R = 10 DD L I 1 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 140 210 ns d(off) t Fall Time 50 80 f t I = 2.9 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 50 80 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 5 V thru 2.5 V GS 50 50 40 40 30 30 20 20 2 V T = 125 C C 10 10 25 C - 55 C 0 0 012345 0.0 0.5 1.0 1.5 2.0 2.5 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72918 2 S09-0226-Rev. C, 09-Feb-09 I - Drain Current (A) D I - Drain Current (A) D