SI4421DY-T1-GE3 Vishay

Si4421DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ( )I (A) DS DS(on) D TrenchFET Power MOSFET 0.00875 at V = - 4.5 V - 14 GS RoHS COMPLIANT - 20 0.01075 at V = - 2.5 V - 12 APPLICATIONS GS Game Station 0.0135 at V = - 1.8 V - 11 GS - Load Switch SO-8 S S 1 8 D S D 2 7 S 3 6 D G G D 4 5 T op V i e w D Ordering Information: Si4421DY-T1-E3 (Lead (Pb)-free) Si4421DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8 GS T = 25 C - 14 - 10 a A Continuous Drain Current (T = 150 C) I J D T = 70 C - 11.5 - 8 A A Pulsed Drain Current I - 40 DM a Continuous Source Current (Diode Conduction) I - 2.7 - 1.36 S T = 25 C 3.0 1.5 A a Maximum Power Dissipation P W D T = 70 C 1.9 0.95 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 33 42 a R Maximum Junction-to-Ambient thJA Steady State 70 85 C/W R Maximum Junction-to-Foot (Drain) Steady State 16 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72114 www.vishay.com S-82282-Rev. C, 22-Sep-08 1Si4421DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 850 A Gate Threshold Voltage - 0.4 - 0.8 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 70 C - 10 DS GS J a I V = - 5 V, V = - 4.5 V - 30 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 14 A 0.007 0.00875 GS D a R V = - 2.5 V, I = - 12 A 0.0085 0.01075 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 11 A 0.011 0.0135 GS D a g V = - 10 V, I = - 14 A 55 S Forward Transconductance fs DS D a V I = - 2.7 A, V = 0 V - 0.6 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 82 125 g Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 14 A 10 nC gs DS GS D Q Gate-Drain Charge 27 gd Gate Resistance R 3 g t Turn-On Delay Time 45 70 d(on) Rise Time t 90 140 V = - 10 V, R = 10 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 350 550 d(off) ns Fall Time t 170 260 f Source-Drain Reverse Recovery t I = - 2.1 A, dI/dt = 100 A/s 135 210 rr F Time Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 V = 5 thru 2 V GS 32 32 1.5 V 24 24 16 16 T = 125 C C 8 8 25 C - 55 C 0 0 0 1234 5 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 V - Drain-to-Source Voltage (V) V - Gate-to-Source V oltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72114 2 S-82282-Rev. C, 22-Sep-08 I - Drain Current (A) D I - Drain Current (A) D