SI4430BDY-T1-E3 Vishay

Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available 0.0045 at V = 10 V 20 GS TrenchFET Power MOSFETs 30 24 0.006 at V = 4.5 V 17 GS 100 % R Tested g SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information: Si4430BDY-T1-E3 (Lead (Pb)-free) Si4430BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 20 14 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 16 11 A I Pulsed Drain Current 60 A DM a I 2.7 1.40 Continuous Source Current (Diode Conduction) S Avalanche Current I 40 AS L = 0.1 mH E Single Pulse Avalanche Energy 80 mJ AS T = 25 C 3.0 1.6 A a P W Maximum Power Dissipation D T = 70 C 2.0 1.0 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 34 41 a R Maximum Junction-to-Ambient (MOSFET) thJA Steady State 67 80 C/W Maximum Junction-to-Foot (Drain) Steady State R 15 19 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 73184 www.vishay.com S09-0228-Rev. D, 09-Feb-09 1Si4430BDY Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 70 C 10 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0037 0.0045 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 17 A 0.0048 0.006 GS D a g V = 15 V, I = 20 A 80 S Forward Transconductance fs DS D a V I = 2.7 A, V = 0 V 0.72 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 24 36 g Q V = 15 V, V = 4.5 V, I = 20 A Gate-Source Charge 10.5 nC gs DS GS D Gate-Drain Charge Q 7.5 gd R Gate Resistance 0.5 1.1 1.7 g Turn-On Delay Time t 20 30 d(on) t Rise Time V = 15 V, R = 15 14 22 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 60 90 ns D GEN g d(off) t Fall Time 18 30 f t 35 50 rr I = 2.7 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time F Q 32 50 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 10 V thru 4 V GS 50 50 40 40 30 30 20 20 T = 125 C C 10 3 V 10 25 C - 55 C 0 0 012345 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73184 2 S09-0228-Rev. D, 09-Feb-09 I - Drain Current (A) D I - Drain Current (A) D