SI4434DY-T1-E3 Vishay

Si4434DY Vishay Siliconix N-Channel 250-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) Rr ()I (A) DS DS(on) D Definition 0.155 at V = 10 V 3.0 GS PWM-Optimized TrenchFET Power MOSFET 250 0.162 at V = 6.0 V 2.9 GS 100 % R Tested g Avalanche Tested APPLICATIONS Primary Side Switch In: - Telecom Power Supplies - Distributed Power Architectures - Miniature Power Modules D SO-8 S 1 8 D 2 7 S D S 3 6 D G 4 5 D G T op V iew Ordering Information: Si4434DY-T1-E3 (Lead (Pb)-free) Si4434DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 250 DS V Gate-Source Voltage V 20 GS T = 25 C 3.0 2.1 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 2.4 1.7 A I Pulsed Drain Current 30 A DM a I 2.6 1.3 Continuous Source Current (Diode Conduction) S Avalanche Current I 13 AS L = 0.1 mH E Single Pulse Avalanche Energy 8.4 mJ AS T = 25 C 3.1 1.56 A a P W Maximum Power Dissipation D T = 70 C 2.0 1.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 33 40 a R Maximum Junction-to-Ambient thJA Steady State 65 80 C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72562 www.vishay.com S09-0322-Rev. D, 02-Mar-09 1Si4434DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 2.0 4.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 250 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 250 V, V = 0 V, T = 55 C 15 DS GS J a I V 10 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 3.0 A 0.129 0.155 GS D a R Drain-Source On-State Resistance DS(on) V = 6.0 V, I = 2.9 A 0.131 0.162 GS D a g V = 15 V, I = 3.0 A 14 S Forward Transconductance fs DS D a V I = 2.8 A, V = 0 V 0.75 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 34 50 g Q V = 100 V, V = 10 V, I = 3.0 A Gate-Source Charge 6.8 nC gs DS GS D Gate-Drain Charge Q 10.5 gd R Gate Resistance 0.6 1.2 1.8 g Turn-On Delay Time t 16 25 d(on) t Rise Time V = 100 V, R = 25 23 35 r DD L I 4.0 A, V = 10 V, R = 6 Turn-Off Delay Time t 47 70 ns D GEN g d(off) t Fall Time 19 30 f Source-Drain Reverse Recovery Time t I = 2.8 A, dI/dt = 100 A/s 100 150 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 40 V = 10 V thru 6 V GS 35 24 30 5 V 25 18 20 12 15 T = 125 C C 10 6 25 C 5 - 55 C 0 0 02468 10 0123456 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72562 2 S09-0322-Rev. D, 02-Mar-09 I - Drain Current (A) D I - Drain Current (A) D