Si4425DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0098 at V = 10 V TrenchFET Power MOSFET - 19.7 GS - 30 27 nC 100 % R Tested g 0.0165 at V = 4.5 V - 15.2 GS APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S SD 1 8 SD 2 7 G SD 3 6 GD 4 5 Top View D Ordering Information: Si4425DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 19.7 C T = 70 C - 15.7 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 13 A b, c T = 70 C - 10.4 A A Pulsed Drain Current I - 50 DM T = 25 C - 4.7 C Continous Source-Drain Diode Current I S b, c T = 25 C - 2.1 A T = 25 C 5.7 C T = 70 C 3.6 C Maximum Power Dissipation P W D b, c T = 25 C 2.5 A b, c T = 70 C 1.6 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 35 50 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 18 22 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 64732 www.vishay.com S09-0314-Rev. A, 02-Mar-09 1Si4425DDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V /T V Temperature Coefficient - 20 DS J DS I = - 250 A mV/C D V /T V Temperature Coefficient 4.9 GS(th) J GS(th) V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.2 - 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 30 A D(on) DS GS V = - 10 V, I = - 13 A 0.0081 0.0098 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10 A 0.0137 0.0165 GS D a g V = - 15 V, I = - 13 A Forward Transconductance 40 S fs DS D b Dynamic Input Capacitance C 2610 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 460 pF oss DS GS Reverse Transfer Capacitance C 395 rss V = - 15 V, V = - 10 V, I = - 13 A 53 80 DS GS D Q Total Gate Charge g 27 41 nC Gate-Source Charge Q 8 V = - 15 V, V = - 4.5 V, I = - 13 A gs DS GS D Q Gate-Drain Charge 13 gd Gate Resistance R f = 1 MHz 0.4 2.1 4.2 g t Turn-On Delay Time 52 78 d(on) t Rise Time V = - 15 V, R = 1.5 41 62 r DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 36 54 d(off) t Fall Time 15 25 f ns t Turn-On Delay Time 12 20 d(on) t Rise Time V = - 15 V, R = 1.5 915 r DD L I - 10 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 42 63 d(off) t Fall Time 915 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 4.7 S C A I Pulse Diode Forward Current - 50 SM Body Diode Voltage V I = - 10 A, V = 0 V - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 30 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns Reverse Recovery Rise Time t 9 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64732 2 S09-0314-Rev. A, 02-Mar-09