X-On Electronics has gained recognition as a prominent supplier of SIR462DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR462DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR462DP-T1-GE3 Vishay

Hot SIR462DP-T1-GE3 electronic component of Vishay
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Part No.SIR462DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 30A 41.7W 7.9mohm @ 10V
Datasheet: SIR462DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5967 ea
Line Total: USD 0.6 
Availability - 5171
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2614
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5508
10 : USD 0.5314
25 : USD 0.5305
100 : USD 0.5001
250 : USD 0.495
500 : USD 0.4891
1000 : USD 0.4829

5820
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4705
6000 : USD 0.4657
24000 : USD 0.4611

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.455
6000 : USD 0.455
9000 : USD 0.455
12000 : USD 0.455

5171
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5967
10 : USD 0.49
30 : USD 0.4386
100 : USD 0.3851
500 : USD 0.3204
1000 : USD 0.3051

20439
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.981
10 : USD 0.7912
100 : USD 0.7061
1000 : USD 0.5992
3000 : USD 0.5244
6000 : USD 0.5083
9000 : USD 0.5083
24000 : USD 0.4761

2614
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 16
Multiples : 1
16 : USD 0.4829

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.5472

5820
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4705
6000 : USD 0.4657
24000 : USD 0.4611

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4793
6000 : USD 0.4745
24000 : USD 0.4699

   
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We are delighted to provide the SIR462DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR462DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SiR462DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET a 0.0079 at V = 10 V 100 % R Tested GS 30 g 30 8.8 nC 100 % UIS Tested a 0.010 at V = 4.5 V 30 GS APPLICATIONS PowerPAK SO-8 High-Side Switch Server, VRM, POL S 6.15 mm 5.15 mm DC/DC 1 D S 2 S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: SiR462DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C 30 C a T = 70 C 30 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 18.9 A A b, c T = 70 C 15.1 A Pulsed Drain Current I 70 DM Avalanche Current I 31 AS L = 0.1 mH Avalanche Energy E mJ 48 AS a T = 25 C 30 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 4 A T = 25 C 41.7 C T = 70 C 26.7 C Maximum Power Dissipation P W D b, c T = 25 C 4.8 A b, c T = 70 C 3.1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 21 26 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.4 3.0 thJC Notes: a. Based on T = 25 C. Package limited. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (SiR462DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V /T V Temperature Coefficient 32 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 50 A D(on) DS GS V = 10 V, I = 20 A 0.0065 0.0079 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 14 A 0.0082 0.010 GS D a g V = 15 V, I = 20 A Forward Transconductance 70 S fs DS D b Dynamic Input Capacitance C 1155 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 260 pF oss DS GS Reverse Transfer Capacitance C 95 rss V = 15 V, V = 10 V, I = 20 A 20 30 DS GS D Q Total Gate Charge g 8.8 14 nC Gate-Source Charge Q 3.5 V = 15 V, V = 4.5 V, I = 20 A gs DS GS D Q Gate-Drain Charge 2.2 gd Gate Resistance R f = 1 MHz 0.2 1.0 2.0 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 15 V, R = 15 15 25 r DD L I 1.0 A, V = 4.5 V, R = 17 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 14 20 d(on) t Rise Time V = 15 V, R = 15 915 r DD L I 1.0 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 915 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 30 S C A I Pulse Diode Forward Current 70 SM Body Diode Voltage V I = 4.0 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 21 42 ns rr Body Diode Reverse Recovery Charge Q 15 30 nC rr I = 4.0 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12.6 a ns Reverse Recovery Rise Time t 8.4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68823 2 S-82771-Rev. C, 17-Nov-08

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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