X-On Electronics has gained recognition as a prominent supplier of SI4413ADY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4413ADY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4413ADY-T1-GE3 Vishay

SI4413ADY-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI4413ADY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 15A 3.0W 7.5mohm @ 10V
Datasheet: SI4413ADY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 1.7725 ea
Line Total: USD 4431.25 
Availability - 0
MOQ: 2500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2500
Multiples : 1
2500 : USD 1.7725
12500 : USD 1.6087
25000 : USD 1.5762

   
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Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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We are delighted to provide the SI4413ADY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4413ADY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si4413ADY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Available 0.0075 at V = - 10 V - 15 GS TrenchFET Power MOSFET - 30 0.011 at V = - 4.5 V - 12.3 GS APPLICATIONS Notebook - Load Switch - Battery Switch S SO-8 S 1 8 D S 2 7 D G S 3 6 D G 4 5 D Top View D Ordering Information: Si4413ADY-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si4413ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 15 - 10.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 11.8 - 8.3 A A I Pulsed Drain Current - 50 DM a I - 2.7 - 1.36 Continuous Source Current (Diode Conduction) S T = 25 C 3.0 1.5 A a P W Maximum Power Dissipation D T = 70 C 1.9 0.95 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 33 42 a R Maximum Junction-to-Ambient thJA Steady State 70 84 C/W R Maximum Junction-to-Foot (Drain) Steady State 16 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 73792 www.vishay.com S-83096-Rev. C, 29-Dec-08 1Si4413ADY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1.0 - 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 70 C - 10 DS GS J a I V = - 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 13 A 0.0063 0.0075 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10 A 0.0083 0.011 GS D a g V = - 15 V, I = - 13 A 50 S Forward Transconductance fs DS D a V I = - 2.7 A, V = 0 V - 0.74 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 61 95 g Q V = - 15 V, V = - 5 V, I = - 13 A Gate-Source Charge 15.5 nC gs DS GS D Gate-Drain Charge Q 32 gd t Turn-On Delay Time 21 35 d(on) Rise Time t 18 30 V = - 15 V, R = 15 r DD L ns I - 1 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN G 170 260 d(off) Fall Time t 97 150 f R Gate Resistance 3.4 g Source-Drain Reverse Recovery Time t I = - 2.1 A, dI/dt = 100 A/s 70 110 ns rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 thru 4 V GS 40 40 30 30 20 20 T = 125 C C 10 10 25 C 3 V - 55 C 2 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 V - Gate-to-Source Voltage (V) GS V - Drain-to-Source Voltage (V) DS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 73792 2 S-83096-Rev. C, 29-Dec-08 I - Drain Current (A) D I - Drain Current (A) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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