New Product SiR476DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Gen III Power MOSFET RoHS 0.0017 at V = 10 V GS 60 COMPLIANT 100 % R Tested 25 42.5 nC g 0.0021 at V = 4.5 V GS 60 100 % Avalanche Tested APPLICATIONS PowerPAK SO-8 VRM, POL, Server High Current DC/DC S 6.15 mm 5.15 mm - Low-Side 1 D S 2 OR-ing S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR476DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 25 DS V V Gate-Source Voltage 20 GS a T = 25 C C 60 a T = 70 C C 60 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 45 b, c T = 70 C A 36 A I Pulsed Drain Current 100 DM a T = 25 C C 60 I Continuous Source-Drain Diode Current S b, c T = 25 C A 5.6 I Single Pulse Avalanche Current 50 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 125 AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C A 6.25 b, c T = 70 C A 4.0 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 15 20 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.9 1.2 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product SiR476DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 25 V DS GS D V Temperature Coefficient V /T 23 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.3 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 25 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0014 0.0017 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.00175 0.0021 GS D a g V = 10 V, I = 20 A 98 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 6150 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 1510 pF oss DS GS C Reverse Transfer Capacitance 640 rss V = 10 V, V = 10 V, I = 20 A 89 135 DS GS D Q Total Gate Charge g 42.5 64 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 20 A 16 gs DS GS D Q Gate-Drain Charge 12 gd R Gate Resistance f = 1 MHz 0.2 1.0 2 g t Turn-On Delay Time 20 40 d(on) t Rise Time V = 10 V, R = 1 918 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 48 90 d(off) Fall Time t 918 f ns t Turn-On Delay Time 50 90 d(on) Rise Time t 31 60 V = 10 V, R = 1 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 60 100 d(off) Fall Time t 48 90 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 100 Pulse Diode Forward Current SM Body Diode Voltage V I = 5 A 0.73 1.1 V SD S t Body Diode Reverse Recovery Time 43 80 ns rr Body Diode Reverse Recovery Charge Q 40 80 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 21 a ns Reverse Recovery Rise Time t 22 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68764 2 S-81715-Rev. A, 04-Aug-08