Si4390DY Vishay Siliconix N-Channel Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Definition 0.0095 at V = 10 V 12.5 GS Extremely Low Q for Switching Losses 30 gd 0.0135 at V = 4.5 V 10.5 GS TrenchFET Power MOSFET 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS High-Side DC/DC Conversion - Notebook - Server SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information: Si4390DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si4390DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 12.5 8.5 A a Continuous Drain Current (T = 150 C) I J D T = 70 C 10 6.8 A A Pulsed Drain Current I 20 DM a Continuous Source Current (Diode Conduction) I 2.7 1.3 S T = 25 C 3.0 1.4 A a Maximum Power Dissipation P W D T = 70 C 1.9 0.9 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 32 42 a Maximum Junction-to-Ambient R thJA Steady State 68 90 C/W Maximum Junction-to-Foot (Drain) Steady State R 15 20 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 72150 www.vishay.com S11-0209-Rev. F, 14-Feb-11 1Si4390DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.8 2.8 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 12.5 A 0.0075 0.0095 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10.5 A 0.0105 0.0135 GS D a g V = 15 V, I = 12.5 A 38 S Forward Transconductance fs DS D a V I = 2.7 A, V = 0 V 0.7 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 10 15 g Q V = 15 V, V = 4.5 V, I = 12.5 A Gate-Source Charge 3.5 nC gs DS GS D Gate-Drain Charge Q 2.1 gd R Gate Resistance 0.2 0.8 1.4 g t Turn-On Delay Time 16 30 d(on) t Rise Time V = 15 V, R = 15 612 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 43 70 d(off) ns t Fall Time 14 25 f Source-Drain Reverse Recovery t I = 2.7 A, dI/dt = 100 A/s 35 60 rr F Time Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 50 50 V = 10 V thru 4 V GS 40 40 30 30 3 V 20 20 T = 125 C C 10 10 25 C - 55 C 0 0 012345 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72150 2 S11-0209-Rev. F, 14-Feb-11 I - Drain Current (A) D I - Drain Current (A) D