6.15 mm SiR640ADP www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a V (V) R ( ) MAX. I (A) Q (TYP.) DS DS(on) D g Low Q for high efficiency g 0.0020 at V = 10 V 100 GS 40 28.5 nC 100 % R and UIS tested g 0.0025 at V = 4.5 V 100 GS Material categorization: PowerPAK SO-8 Single for definitions of compliance please see D www.vishay.com/doc 99912 D 8 D 7 D 6 APPLICATIONS D 5 Synchronous rectification DC/DC converter 1 DC/AC inverter 2 S G 3 S 4 S 1 G Top View Bottom View S Ordering Information: N-Channel MOSFET SiR640ADP-T1-GE3 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS a T = 25 C 100 C a T = 70 C 100 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 41.6 A b, c T = 70 C 33.3 A A Pulsed Drain Current (t = 100 s) I 350 DM T = 25 C 94 C Continuous Source-Drain Diode Current I S b, c T = 25 C 5.6 A Single Pulse Avalanche Current I 40 AS L = 0.1 mH Single Pulse Avalanche Energy E 80 mJ AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C 6.25 A b, c T = 70 C 4 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT b, f Maximum Junction-to-Ambient t 10 s R 15 20 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.9 1.2 thJC Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 C/W. S16-0148-Rev. C, 01-Feb-16 Document Number: 62870 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mmSiR640ADP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 - - V DS GS D V Temperature Coefficient V /T I = 250 A - -4.6 - mV/C GS(th) GS(th) J D Gate-Source Threshold Voltage V V = V , I = 250 A 0.9 - 2 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 40 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 30 - - A D(on) DS GS V = 10 V, I = 20 A - 0.00165 0.00200 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 20 A - 0.00205 0.00250 GS D a Forward Transconductance g V = 15 V, I = 20 A - 82 - S fs DS D b Dynamic Input Capacitance C - 4240 - iss Output Capacitance C V = 20 V, V = 0 V, f = 1 MHz - 3930 - pF oss DS GS Reverse Transfer Capacitance C -230- rss V = 20 V, V = 10 V, I = 20 A - 60 90 DS GS D Total Gate Charge Q g -28.5 43 nC Gate-Source Charge Q V = 20 V, V = 4.5 V, I = 20 A -9.6 - gs DS GS D Gate-Drain Charge Q -5.1- gd Gate Resistance R f = 1 MHz 0.4 1.2 2 g Turn-On Delay Time t -17 34 d(on) Rise Time t -6 12 r V = 20 V, R = 2 DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t -4D GEN g 485 d(off) Fall Time t -8 16 f ns Turn-On Delay Time t -38 75 d(on) Rise Time t -70 140 r V = 20 V, R = 2 DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t -4D GEN g 280 d(off) Fall Time t -12 24 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 94 S C A Pulse Diode Forward Current (t = 100 s) I -- 350 SM Body Diode Voltage V I = 5 A - 0.7 1.1 V SD S Body Diode Reverse Recovery Time t - 79 160 ns rr Body Diode Reverse Recovery Charge Q - 80 160 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -22 - a ns Reverse Recovery Rise Time t -57 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0148-Rev. C, 01-Feb-16 Document Number: 62870 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000