Si4368DY Vishay Siliconix N-Channel Reduced Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.0032 at V = 10 V 25 GS 30 Extremely Low Q for Switching gd 0.0036 at V = 4.5 V 22 GS Losses Improvement TrenchFET Gen II Power MOSFET 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Low-Side DC/DC Conversion - Notebook, Server, VRM Module SO-8 Fixed Telecom D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information: Si4368DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si4368DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 12 GS T = 25 C 25 17 a A Continuous Drain Current (T = 150 C) I J D T = 70 C 20 13 A Pulsed Drain Current (10 s Pulse Width) I 70 A DM a Continuous Source Current (Diode Conduction) I 2.9 1.3 S Avalanch Current L = 0.1 mH I 50 AS T = 25 C 3.5 1.6 a A Maximum Power Dissipation P W D T = 70 C 2.2 1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 29 35 a Maximum Junction-to-Ambient R thJA Steady State 67 80 C/W Maximum Junction-to-Foot (Drain) Steady State R 13 16 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 72704 www.vishay.com S11-0209-Rev. D, 14-Feb-11 1Si4368DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.6 1.8 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 30 A D(on) DS GS V = 10 V, I = 25 A 0.0026 0.0032 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 22 A 0.0029 0.0036 GS D a Forward Transconductance g V = 15 V, I = 25 A 150 S fs DS D a Diode Forward Voltage V I = 2.9 A, V = 0 V 0.66 1.1 V SD S GS b Dynamic Input Capacitance C 8340 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 850 pF oss DS GS Reverse Transfer Capacitance C 355 rss Total Gate Charge Q 53 80 g Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 20 A 17.5 nC gs DS GS D Gate-Drain Charge Q 6.5 gd Gate Resistance R f = 1 MHz 0.8 1.2 1.8 g Turn-On Delay Time t 25 38 d(on) Rise Time t 20 30 V = 15 V, R = 15 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 172260 ns D GEN g d(off) Fall Time t 41 62 f Source-Drain Reverse Recovery Time t I = 2.9 A, dI/dt = 100 A/s 42 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 60 60 V = 10 V thru 3 V GS 50 50 40 40 30 30 20 20 T = 125 C C 2 V 10 10 25 C - 55 C 0 0 012345 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72704 2 S11-0209-Rev. D, 14-Feb-11 I - Drain Current (A) D I - Drain Current (A) D