SiR698DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Max. I (A) Q (Typ.) Definition DS DS(on) D g 0.195 at V = 10 V 7.5 TrenchFET Power MOSFET GS 100 5.2 nC 100 % R and UIS Tested 0.230 at V = 6 V 6.9 GS g Low Q for High Efficiency g Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS LED Monitor S 6.15 mm 5.15 mm 1 - Boost and Dimming S 2 S 3 D G 4 D 8 D 7 D 6 D G 5 Bottom View Ordering Information: SiR698DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 7.5 C T = 70 C 6 C Continuous Drain Current (T = 150 C) I J D b,c T = 25 C 3 A b,c T = 70 C 2.4 A A Pulsed Drain Current I 10 DM T = 25 C 8 C Continuous Source-Drain Diode Current I S b,c T = 25 C 3.1 A Single Pulse Avalanche Current I 5 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 1.25 AS T = 25 C 23 C 14.8 T = 70 C C Maximum Power Dissipation P W D b,c T = 25 C 3.7 A b,c T = 70 C 2.4 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 28 34 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 4.3 5.4 thJC Notes: a. T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 75 C/W. Document Number: 67918 www.vishay.com S11-2524-Rev. A, 26-Dec-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiR698DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 V DS GS D V Temperature Coefficient V /T I = 250 A - 7.1 mV/C GS(th) GS(th) J D V V = V , I = 250 A Gate-Source Threshold Voltage 2.5 3.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 2.5 A 0.162 0.195 GS D a R Drain-Source On-State Resistance DS(on) V = 6 V, I = 2.3 A 0.190 0.230 GS D a g V = 10 V, I = 2.5 A 5.3 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 210 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 35 pF oss DS GS C Reverse Transfer Capacitance 15 rss Q Total Gate Charge 5.2 8 g Gate-Source Charge Q V = 50 V, V = 10 V, I = 2.5 A 1.1 nC gs DS GS D Q Gate-Drain Charge 1.9 gd R Gate Resistance f = 1 MHz 0.34 1.7 3.4 g Turn-On Delay Time t 715 d(on) t Rise Time V = 50 V, R = 50 11 20 r DD L ns I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 815 D GEN g d(off) t Fall Time 11 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 8 S C A a I 10 Pulse Diode Forward Current SM V I = 2.2 A 0.8 1.2 V Body Diode Voltage SD S t Body Diode Reverse Recovery Time 40 80 ns rr Q Body Diode Reverse Recovery Charge 45 90 nC rr I = 2.2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 22 a ns t Reverse Recovery Rise Time 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67918 2 S11-2524-Rev. A, 26-Dec-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000