X-On Electronics has gained recognition as a prominent supplier of SIR770DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR770DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR770DP-T1-GE3 Vishay

SIR770DP-T1-GE3 electronic component of Vishay
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Part No.SIR770DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 8A/8A DUAL N-CH MOSFET w/Shottky
Datasheet: SIR770DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0505 ea
Line Total: USD 1.05 
Availability - 5198
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.5135
6000 : USD 0.5135
9000 : USD 0.5135
12000 : USD 0.5135

5198
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0505
10 : USD 0.8723
100 : USD 0.6435
500 : USD 0.5357
1000 : USD 0.5016
3000 : USD 0.4763
6000 : USD 0.4741
9000 : USD 0.4675
24000 : USD 0.4664

   
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We are delighted to provide the SIR770DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR770DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SiR770DP Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, f V R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.021 at V = 10 V 8.0 GS Channel-1 30 6.6 TrenchFET Power MOSFET 0.025 at V = 4.5 V 8.0 GS 100 % R and UIS Tested g 0.021 at V = 10 V 8.0 GS Channel-2 30 6.6 Compliant to RoHS Directive 2002/95/EC 0.025 at V = 4.5 V 8.0 GS APPLICATIONS SCHOTTKY PRODUCT SUMMARY Fixed Telecom V (V) SD a - Server V (V) Diode Forward Voltage I (A) DS F Synchronous Converter 30 0.50 V at 1.0 A 4.0 PowerPAK SO-8 S1 5.15 mm 6.15 mm 1 D 2 D G1 1 2 S2 3 G2 4 D1 8 Schottky Diode D1 G 1 G 7 2 D2 6 D2 5 Bottom View S S 2 1 Ordering Information: SiR770DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Channel-1Channel-2Unit V 30 30 Drain-Source Voltage DS V V Gate-Source Voltage 20 20 GS f f T = 25 C C 8 8 f f T = 70 C 8 8 C Continuous Drain Current (T = 150 C) I J D b, c, f b, c, f T = 25 C A 8 8 b, c, f b, c, f T = 70 C A 8 8 I A Pulsed Drain Current (300 s) 35 35 DM f f T = 25 C C 8 8 Source-Drain Current Diode Current I S b, c b, c T = 25 C A 3 3 I Pulsed Source-Drain Current 35 35 SM I Single Pulse Avalanche Current 15 15 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 11.2 11.2 AS T = 25 C 17.8 17.8 C T = 70 C 11.4 11.4 C Maximum Power Dissipation P W D b, c b, c T = 25 C A 3.6 3.6 b, c b, c T = 70 C A 2.3 2.3 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Package limited. Document Number: 66818 www.vishay.com S10-1923-Rev. A, 23-Aug-10 1SiR770DP Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Typ. Max. Typ. Max. Parameter Symbol Unit a, b t 10 s R 28 35 28 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5.5 7.0 5.5 7.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J c Typ. Parameter Symbol Test Conditions Min. Max. Unit Static V = 0 V, I = 250 A Ch-1 30 GS D Drain-Source Breakdown Voltage V V DS V = 0 V, I = 1 mA Ch-2 30 GS D V Temperature Coefficient V /T I = 250 A Ch-1 34 DS DS J D mV/C V Temperature Coefficient V /T I = 250 A Ch-1 - 5.5 GS(th) GS(th) J D V = V , I = 250 A Ch-1 1.2 2.8 DS GS D Gate Threshold Voltage V V GS(th) V = V , I = 250 A Ch-2 1.2 2.8 DS GS D V = 0 V, V = 20 V Ch-1 100 DS GS Gate-Body Leakage I nA GSS V = 0 V, V = 20 V Ch-2 100 DS GS V = 30 V, V = 0 V Ch-1 0.001 DS GS V = 30 V, V = 0 V Ch-2 0.015 0.1 DS GS Zero Gate Voltage Drain Current I mA DSS V = 30 V, V = 0 V, T = 100 C Ch-1 0.025 DS GS J V = 30 V, V = 0 V, T = 100 C Ch-2 1.2 15 DS GS J V = 5 V, V = 10 V Ch-1 10 DS GS d On-State Drain Current I A D(on) V = 5 V, V = 10 V Ch-2 10 DS GS V = 10 V, I = 8 A Ch-1 0.0175 0.021 GS D V = 10 V, I = 8 A Ch-2 0.0175 0.021 GS D d Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 6 A Ch-1 0.0205 0.025 GS D V = 4.5 V, I = 6 A Ch-2 0.0205 0.025 GS D V = 15 V, I = 8 A Ch-1 31 DS D d Forward Transconductance g S fs V = 15 V, I = 8 A Ch-2 31 DS D c Dynamic Ch-1 900 Input Capacitance C iss Channel-1 Ch-2 900 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 150 Output Capacitance C pF oss Ch-2 180 Channel-2 V = 15 V, V = 0 V, f = 1 MHz Ch-1 60 DS GS Reverse Transfer Capacitance C rss Ch-2 60 Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 80 C/W. c. Guaranteed by design, not subject to production testing. d. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com Document Number: 66818 2 S10-1923-Rev. A, 23-Aug-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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