SiR770DP Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, f V R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.021 at V = 10 V 8.0 GS Channel-1 30 6.6 TrenchFET Power MOSFET 0.025 at V = 4.5 V 8.0 GS 100 % R and UIS Tested g 0.021 at V = 10 V 8.0 GS Channel-2 30 6.6 Compliant to RoHS Directive 2002/95/EC 0.025 at V = 4.5 V 8.0 GS APPLICATIONS SCHOTTKY PRODUCT SUMMARY Fixed Telecom V (V) SD a - Server V (V) Diode Forward Voltage I (A) DS F Synchronous Converter 30 0.50 V at 1.0 A 4.0 PowerPAK SO-8 S1 5.15 mm 6.15 mm 1 D 2 D G1 1 2 S2 3 G2 4 D1 8 Schottky Diode D1 G 1 G 7 2 D2 6 D2 5 Bottom View S S 2 1 Ordering Information: SiR770DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Channel-1Channel-2Unit V 30 30 Drain-Source Voltage DS V V Gate-Source Voltage 20 20 GS f f T = 25 C C 8 8 f f T = 70 C 8 8 C Continuous Drain Current (T = 150 C) I J D b, c, f b, c, f T = 25 C A 8 8 b, c, f b, c, f T = 70 C A 8 8 I A Pulsed Drain Current (300 s) 35 35 DM f f T = 25 C C 8 8 Source-Drain Current Diode Current I S b, c b, c T = 25 C A 3 3 I Pulsed Source-Drain Current 35 35 SM I Single Pulse Avalanche Current 15 15 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 11.2 11.2 AS T = 25 C 17.8 17.8 C T = 70 C 11.4 11.4 C Maximum Power Dissipation P W D b, c b, c T = 25 C A 3.6 3.6 b, c b, c T = 70 C A 2.3 2.3 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Package limited. Document Number: 66818 www.vishay.com S10-1923-Rev. A, 23-Aug-10 1SiR770DP Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Typ. Max. Typ. Max. Parameter Symbol Unit a, b t 10 s R 28 35 28 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5.5 7.0 5.5 7.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J c Typ. Parameter Symbol Test Conditions Min. Max. Unit Static V = 0 V, I = 250 A Ch-1 30 GS D Drain-Source Breakdown Voltage V V DS V = 0 V, I = 1 mA Ch-2 30 GS D V Temperature Coefficient V /T I = 250 A Ch-1 34 DS DS J D mV/C V Temperature Coefficient V /T I = 250 A Ch-1 - 5.5 GS(th) GS(th) J D V = V , I = 250 A Ch-1 1.2 2.8 DS GS D Gate Threshold Voltage V V GS(th) V = V , I = 250 A Ch-2 1.2 2.8 DS GS D V = 0 V, V = 20 V Ch-1 100 DS GS Gate-Body Leakage I nA GSS V = 0 V, V = 20 V Ch-2 100 DS GS V = 30 V, V = 0 V Ch-1 0.001 DS GS V = 30 V, V = 0 V Ch-2 0.015 0.1 DS GS Zero Gate Voltage Drain Current I mA DSS V = 30 V, V = 0 V, T = 100 C Ch-1 0.025 DS GS J V = 30 V, V = 0 V, T = 100 C Ch-2 1.2 15 DS GS J V = 5 V, V = 10 V Ch-1 10 DS GS d On-State Drain Current I A D(on) V = 5 V, V = 10 V Ch-2 10 DS GS V = 10 V, I = 8 A Ch-1 0.0175 0.021 GS D V = 10 V, I = 8 A Ch-2 0.0175 0.021 GS D d Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 6 A Ch-1 0.0205 0.025 GS D V = 4.5 V, I = 6 A Ch-2 0.0205 0.025 GS D V = 15 V, I = 8 A Ch-1 31 DS D d Forward Transconductance g S fs V = 15 V, I = 8 A Ch-2 31 DS D c Dynamic Ch-1 900 Input Capacitance C iss Channel-1 Ch-2 900 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 150 Output Capacitance C pF oss Ch-2 180 Channel-2 V = 15 V, V = 0 V, f = 1 MHz Ch-1 60 DS GS Reverse Transfer Capacitance C rss Ch-2 60 Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 80 C/W. c. Guaranteed by design, not subject to production testing. d. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com Document Number: 66818 2 S10-1923-Rev. A, 23-Aug-10